Si/SiO2 Multilayers
Multilayer structures consisting of Si/SiO2 are used in 3rd generation solar cells. Quantum confinement in the Si layers is used to tune the effective band gap to the desired size enabling an absorption of UV light while minimizing relaxation losses at the same time. The transmission electron micrograph clearly shows that continuous layers of Si and SiO2 with thicknesses down to 3nm can be grown.
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Steep Slope Transistors
Tunnel FETs (TFET) with a superior switching behavior have been intensively investigated in recent years since they allow realizing energy efficient logic circuits. Optimization of the device performance is studied both experimentally as well as with simulations at our institute. The image shows the local density of states in a TFET enabling a high tunneling current to flow from source to the channel. .
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Solar Cell’s Surface Texturing
The surface of solar cells is usually textured in order to suppress specular reflection of incident light yielding a significantly improved light to electricity conversion efficiency. The image shows a scanning electron micrograph of a typical texturing of a crystalline silicon solar cell.
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Semiconductor Nanostructures
Patterning semiconductors into nanostructures allows tailoring the electronic and mechanical properties of the material. Our institute operates a clean room facility for the fabrication and characterization of a large variety of different nanostructures based on different semiconducting materials.
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Latest
New Project within DFG Priority Program SPP 1613
Within the priority program "Fuels Produced Regeneratively Through Light-Driven Water Splitting: Clarification of the Elemental Processes Involved and Prospects for Implementation in Technological Concepts" (SPP 1613) the DFG has granted the project “A Monolithic All-Silicon Multi-Junction … Read More...
Research Highlights
In the Press: DuPont™ Solamet® PV17x Photovoltaic Metallization Enables Lightly Doped Emitter Technology
In this work we report for the first time on successful direct contacting of high sheet resistance emitter at 100 Ohm/sq by emitter profile manipulation. The formation of lightly doped emitter via POCl3 diffusion was investigated and optimized by the variation of temperature, time and gas … Read More...