Our institute has moved

Our institute has moved within the Walter-Schottky-Haus (WSH). From now on you find us on the second floor in building section C of the WSH. Please refer to the MEMBERS section on our homepage for the new room allocations and telephone numbers of our employees. Our postal address stays the same. … [Read more...]

Obituary – Professor Dr. phil. Heinrich Kurz

Filled with consternation we take leave of Professor Dr. phil. Heinrich Kurz who passed away on March 12th, 2016 at the age of 72. Professor Kurz was an exceptional person with impressive achievements in science and in the organization of science. After obtaining his doctoral degree in 1971 at the University of Vienna he worked for 10 years at the Philips Research Laboratories in Hamburg. He joined the group of Professor Nicolaas Bloembergen at Harvard University from 1981 to 1984 before he became Professor of Electrical Engineering at RWTH Aachen University in 1984. Three years later, in 1987 he received the “Alfried-Krupp-Förderpreis” Award in ultrafast optoelectronics for young … [Read more...]

Open Bachelor/Master thesis: Circuit simulation for high-sensitive cantilever array sensors

Within the new project about cantilever-field-effect transistors, funded by the Hans L. Merkle foundation, we offer a bachelor/master thesis for students in the field of electrical engineering, physics or material science. The topic of the thesis is circuit simulation for high-sensitive cantilever array sensors. We want to develop an integrated circuit which benefits from the specific cantilever properties, thus the focus is on circuit design and simulation. Main purpose is to enable the use of cantilever sensors in current sensor applications and therefore to make the technology available for a wider market. For further information please have a look at the details (german) or contact … [Read more...]

Silicide Contacts in Solar Cells

Silicide Contacts in Solar Cells One of the most difficult parts of solar cells are the generation of appropriate ohmic contacts. Using dopant segregation during nickel silicidation enables contacting emitters with almost arbitrary dopant concentration. In turn, this allows optimizing the emitter with respect to lowest recombination. Read More... … [Read more...]

2D Materials

2D Materials Two-dimensional material such as graphene and transition metal dichalcogenides are currently attracting an increasing attention. The reason is the ultrathin body thickness allowing for the realization of ultimately scaled FET without sacrificing electrostatic integrity. At the same time, they can be patterned with planar technology. In addition, heterostructures can easily be fabricated enabling an engineering of desired electronic properties. Read More... … [Read more...]

Carbon-based Transistors

Carbon-based Transistors To investigate carbon-based materials (mono- and bilayer graphene, carbon nanotubes) for advanced nanoscale field-effect transistors we fabricate buried triple- and multi-gate structures that enable the generation of a potential landscape in the direction of current transport. This is used to study e.g. band-to-band tunneling in these materials as well as alternative device concepts. … [Read more...]

New projects

DFG project within Priority Program “Graphene” In addition to an extension of an existing project on graphene-based band-to-band tunnel field-effect transistors, the DFG has granted the project “Strained graphene field-effect transistors - A nano-electro-mechanical transistor with MOSFET-like on currents and superior switching behavior”. The project starts at the end of 2013 and will run for the next three years. Hans L. Merkle Foundation funds project on novel cantilever-based sensors The new project „Cantilever-field-effect transistors for the quantitative and qualitative detection of gases” aims at the realization of cantilever sensors that are based on a novel way of electronic … [Read more...]

New Project within DFG Priority Program SPP 1613

Within the priority program "Fuels Produced Regeneratively Through Light-Driven Water Splitting: Clarification of the Elemental Processes Involved and Prospects for Implementation in Technological Concepts" (SPP 1613) the DFG has granted the project “A Monolithic All-Silicon Multi-Junction Photovoltaic Electrolysis Device for Solar Hydrogen Production by Direct Water Splitting”. The project will be funded for three years. … [Read more...]

In the Press: DuPont™ Solamet® PV17x Photovoltaic Metallization Enables Lightly Doped Emitter Technology

In this work we report for the first time on successful direct contacting of high sheet resistance emitter at 100 Ohm/sq by emitter profile manipulation. The formation of lightly doped emitter via POCl3 diffusion was investigated and optimized by the variation of temperature, time and gas fluxes. By increasing the n++ layer and at the same time reducing the peak concentration of inactive phosphorous doping, an efficiency gain of up to 1% absolute was achieved for multicrystalline silicon (mc-Si) solar cells. Based on these investigations we evaluated a 160 Ohm/sq emitter and could demonstrate by laser doping that n++ layer of up to 6.5 x 1018cm -3 leads to high FF and an absolute … [Read more...]

IHT Member awarded at the SiliconPV 2012 Conference

From 3rd till 5th of April the 2nd International Conference on Silicon Photovoltaics (SiliconPV 2012) took place in Leuven, Belgium. More than 200 abstracts from more than 20 countries worldwide have been handed in for review, 35% more than 2011. The  paper  "Generation of Defect-Related Acceptor States by Laser Doping" by our Research Assistant Ali Safiei got awarded as one of the ten best papers of the conference.  The paper will be published in SOLMAT. … [Read more...]