Publications

[RWTH Database]

Overview

Journal Articles

2016

  • S. Fischer, H.I. Kremer, B. Berghoff, T. Maß, T. Taubner, J. Knoch, “Dopant-free complementary metal oxide silicon field effect transistors”, Physica status solidi / A 213(6), Site/Article-Nr.:1494–1499

2015

  • Yusufoglu, U. A., Pletzer, T. M., Koduvelikulathu, L. J., Comparotto, C., et al,  “Analysis of the Annual Performance of Bifacial Modules and Optimization Methods”, IEEE Journal of Photovoltaics 5(1), 320-328 (2015)
  • Al Rawashdeh, W., Weyand, T., Kray, S., Lenz, M., et al, “Differential contrast of gold nanorods in dual-band OCT using spectral multiplexing”, Journal of nanoparticle research 17(3), 138, 11 S. (2015)
  • M. Raval, A. Joshi, S. Saseendran, S. Suckow, S. Saravanan, C. S. Solanki: “Study of Nickel Silicide Formation and Associated Fill-Factor Loss Analysis for Silicon Solar Cells With Plated Ni-Cu Based Metallization”, IEEE Journal of Photovoltaics 08/2015
  • M. Raval, S. Saseendran, S. Suckow, S. Saravanan, C. S. Solanki, A. Kottantharayil: “N2O plasma treatment for minimization of background plating in silicon solar cells with Ni–Cu front side metallization“, Solar Energy Materials and Solar Cells 144(2016):671–677 · January 2016

2014

  • M. C. Raval, S. Suckow, C. S. Solanki: “Analysis of background plating for Ni-Cu based metallization based on local ideality factor variation”, in Proceedings of the 29th European Photovoltaic Solar Energy Conference (29th EU PVSEC), 1143 (2014)
  • M.R. Müller, A. Gumprich, F. Schütte, K. Kallis, U. Künzelmann, S. Engels, C. Stampfer, N. Wilck and J. Knoch, “Buried triple-gate structures for advanced field-effect transistor devices”, Microelectron. Engin. 119, 95-99 (2014).
  • J. Knoch and M. Müller, „Electrostatic Doping—Controlling the properties of carbon-based FETs with gates“, IEEE Trans. Nanotechnol., 13(6), 1044-1052 (2014).
  • Gül, Ö., Günel, H. Y. (Corresponding author), Lüth, H., Rieger, T., et al, “Giant Magnetoconductance Oscillations in Hybrid Superconductor−Semiconductor Core/Shell Nanowire Devices”, Nano letters 14(11), 6269-6274 (2014)
  • M. Claus, A. Fediai, S. Mothes, J. Knoch, D. Ryndyk, S. Blawid, G. Cuniberti and M. Schroter, “Towards a multiscale modeling framework for metal-CNT interfaces ”, IWCE 2014, 1-3 (2014).
  • M. Lenz, H. Windgassen, T. Pletzer and J. Knoch, „Contacting Moderately Doped Phosphorous Emitters of Silicon Solar Cells With Dopant Segregation During Nickel Silicidation“, IEEE J. Photovolt., 4(4), 1025-1031 (2014).
  • M. Lenz and J. Knoch, „Analysis of emitter performance contacted with silicide induced dopant segregation“, IEEE PVSC 2014, 2994-2997 (2014).
  • T.M. Pletzer, J.I. van Molken, S. Rissland, B. Hallam, E. Cornagliotti, J. John, O. Breitenstein and J. Knoch, „Quantitative local current-voltage analysis with different spatially-resolved camera based techniques of silicon solar cells with cracks“, IEEE PVSC 2014, 3473-3478 (2014).

2013

  • J. Knoch, T. Grap and M. Müller, “Gate-controlled doping in carbon-based FETs”, 2013 VLSI-SoC, 162-167 (2013).
  • T.M. Pletzer, J.I. von Moelken, S. Rissland, O. Breitenstein and J. Knoch, „Influence of cracks on the local current-voltage parameters of silicon solar cells“, Prog. Photovolt., 2013.

2012

  • U. Künzelmann, M.R. Müller, K.T. Kallis, F. Schütte, S. Menzel, S. Engels, J. Fong, C. Lin, J. Dysard, J.W. Bartha and J. Knoch, „Chemical-Mechanical Planarization of Aluminium Damascene Structures“, ICPT 2012, 1-6 (2012).
  • A. Safiei, H. Windgassen, K. Wolter and H. Kurz, Emitter profile tailoring to contact homogeneous high sheet resistance emitter, Energy Procedia, 27, 432-437 (2012).
  • R. Khandelwal, U. Plachetka, B. Min, C. Moormann and H. Kurz, Comparative study based on optical and electrical performance of micro- and nano- textured surfaces for silicon solar cells, Microelectron. Engin., in press.
  • J. Knoch, Z. Chen and J. Appenzeller, Properties of Metal-Graphene Contacts, IEEE Trans. Nanotechnol. 11, 513-519 (2012).
  • C. Kontis, M. Müller, C. Küchenmeister, K.T. Kallis and J. Knoch, Optimizing the Identification of Graphene Mono- and Bi-Layers on Multi-Layer Substrates, Appl. Opt. 51, 385-389 (2012).
  • K. Ding, U. Aeberhard, O. Astakhov, U. Breuer, M. Beigmohamadi, S. Suckow, B. Berghoff, W. Beyer, F. Finger, R. Carius and U. Rau, Defect passivation by hydrogen reincorporation for silicon quantum dots in SiC/SiOx hetero-superlattice, Journal of Non-Crystalline Solids 358, 2145 (2012).
  • T.M. Pletzer, S. Suckow, E.F.R. Stegemann, H. Windgassen, D.L. Bätzner, and H.Kurz, Phosphorus gettering of iron by screen-printed emitters in monocrystalline Czochralski silicon wafers, Progress in Photovoltaics: Research and Applications, online published on 27th of March, 2012, DOI: 10.1002/pip.2175, in press
  • A. Safiei, R. Derix, S. Suckow, H. Koch, U. Breuer, T. M. Pletzer, K. Wolter and H. Kurz, Generation of Defect-Related Acceptor States by Laser Doping, Solar Energy Materials and Solar Cells 106, Pages 2-6, 2012, DOI: 10.1016/j.solmat.2012.06.045
  • S. Suckow, T. M. Pletzer, and H. Kurz, Fast and reliable calculation of the two-diode model without simplifications, Progress in Photovoltaics: Research and Applications, published online (2012). DOI: 10.1002/pip.2301.
  • J. I. van Mölken, U. A. Yusufoglu, A. Safiei, H. Windgassen, R. Khandelwal, T. M. Pletzer, and H. Kurz, Impact of micro-cracks on the degradation of solar cell performance based on two-diode model parameters, Energy Procedia 27, Pages 167-172, 2012, DOI: 10.1016/j.egypro.2012.07.046
  • U. A. Yusufoglu, B. Min, J. I. van Mölken, T. M. Pletzer, and H. Kurz, Simulation and analysis of PV module performance by innovative sorting methods, Energy Procedia 27, Pages 685-690, 2012, DOI: 10.1016/j.egypro.2012.07.130

2011

  • K.T. Kallis, L.O. Keller, C. Küchenmeister, J.T. Horstmann, J. Knoch, and H. Fiedler, Nanofin based filaments for sensor applications, Microelectron. Eng. 88, 2290-2293 (2011).
  • T. Zhang, I. Perez-Wurlf, B. Berghoff, S. Suckow and G. Conibeer, Optical evaluation of doping concentration in SiO2 doping source layer for silicon quantum dot materials, EPJ Photovoltaics 2, 25001 (2011).
  • T. Mchedlidze, M. Beigmohamadi, B. Berghoff, R. Sohal, S. Suckow, T. Arguirov, N. Wilck, J. Mayer, B. Spangenberg and M. Kittler, Structural characterization of crystallized Si thin film material by HRTEM and Raman spectroscopy, Physica Status Solidi (A) 208, 588 (2011).
  • T.M. Pletzer, E.F.R. Stegemann, H. Windgassen, S. Suckow, D.L. Bätzner and H. Kurz, Gettering in multicrystalline silicon wafers with screen-printed emitters, Progress in Photovoltaics: Research and Applications 19, 946-953 (2011). DOI: 10.1002/pip.1099.
  • T. M. Pletzer, H. Windgassen, and H. Kurz, Applicability of screen-printable dopant pastes: gettering and selective emitters, Photovoltaics International, Twelfth edition, Pages 65-71, 2011

2010

  • S. Suckow, B. Berghoff, and H. Kurz, Geometric broadening in resonant tunneling through Si quantum dots, Energy Proceedia 2, 207 (2010).
  • B. Berghoff, S. Suckow, R. Rölver, B. Spangenberg, H. Kurz, A. Sologubenko and J. Mayer, Quantum wells based on Si/SiOx stacks for nanostructured absorbers, Solar Energy Materials and Solar Cells 94, 1893 (2010).
  • S.F. Feste, J. Knoch, D. Buca, Q.T. Zhao, U. Breuer and S. Mantl, Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation, J. Appl. Phys., 107, 044510 (2010).
  • J. Knoch and J. Appenzeller, Modeling of High-performance p-type III-V heterojunction tunnel FETs, IEEE Electron Dev. Lett., 31, 305-307 (2010).
  • C. Urban, M. Emam, C. Sandow, J. Knoch, Q.T. Zhao, J.-P. Raskin and S. Mantl, RF performance of n-type Schottky Barrier MOSFETs with dopant segregation on thin-body SOI, IEEE Electron Dev. Lett., 31, 537-539 (2010).
  • C. Urban, Q.T. Zhao, C. Sandow, J. Knoch, S. Lenk and S. Mantl, Systematic study of Schottky-barrier MOSFETs with dopant segregation in thin body SOI, Solid-State Electron. 54, 185-190 (2010).

2009

  • B. Berghoff, S. Suckow, R. Rölver, B. Spangenberg, H. Kurz, A. Sologubenko and J. Mayer, Improved charge transport through Si based multiple quantum wells with substoichiometric SiOx barrier layers, Journal of Applied Physics 106, 083706 (2009).
  • T. Arguirov, T. Mchedlidze, S. Kouteva-Arguirova, M. Kittler, R. Rölver, B. Berghoff, D. Bätzner and B. Spangenberg, Laser annealing of the Si layers in Si/SiO2 multiple quantum wells, Materials Science and Engineering B 159, 57 (2009).
  • S.F. Feste, T. Schäpers, S. Buca, Q.T. Zhao, J. Knoch, M. Bouhassoune, A. Schindlmayr and S. Mantl, Measurements of effective electron mass in biaxial tensile strained silicon on insulator, Appl. Phys. Lett. 95, 182101 (2009).
  • S.F. Feste, J. Knoch, S. Habicht, D. Buca, Q.T. Zhao and S. Mantl, Silicon nanowire nFETs with uniaxial tensile strain, Solid-State Electron. 53, 1257-1262 (2009).
  • S.F. Feste, M. Zhang, J. Knoch, S.-L. Zhang and S. Mantl, Impact of variability on the performance of SOI Schottky-barrier MOSFETs, Solid-State Electron., 53, 418-423 (2009).
  • C. Sandow, J. Knoch, C. Urban. Q.T. Zhao and S. Mantl, Impact of electrostatics and doping concentration on the performance of SOI tunnel FETs, Solid-State Electron. 53, 1126-1129 (2009).
  • H. Ghoneim, J. Knoch, H. Riel, M.T. Bjoerk, H. Schmid and W. Riess, Suppression of the ambipolar behavior in metal source/drain field-effect transistors, Appl. Phys. Lett. 95, 213504 (2009).
  • H. Schmid, M.T. Björk, J. Knoch, S. Karg, H. Riel and W. Riess, Doping limits of grown in-situ doped silicon nanowires , Nano Lett., 9 173-178 (2009).
  • M.T. Bjoerk, H. Schmid, J. Knoch, H. Riel and W. Riess, Dopant deactivation in silicon nanostructures, Nature Nanotech. 4, 103-107 (2009).
  • S.F. Feste, M. Zhang, J. Knoch, S.-L. Zhang and S. Mantl, Impact of variability on the performance of SOI Schottky-barrier MOSFETs , Solid-State Electron. 53, 418-423 (2009).

2008

  • B. Berghoff, S. Suckow, R. Rölver, B. Spangenberg, H. Kurz, A. Dimyati and J. Mayer, Resonant and phonon-assisted tunneling transport through silicon quantum dots embedded in SiO2, Applied Physics Letters 93, 132111 (2008).
  • R. Rölver, B. Berghoff, D. Bätzner, B. Spangenberg, H. Kurz, B. Stegemann and M. Schmidt, Si/SiO2 quantum wells for all silicon tandem solar cells: conductivity and photocurrent measurements, Thin Solid Films 516, 6763 (2008).
  • T. Mchedlidze, T. Arguirov, S. Kouteva-Arguirova, G. Jia, M. Kittler, R. Rölver, B. Berghoff, M. Först and B. Spangenberg, Influence of a substrate, structure and annealing procedures on crystalline and optical properties of Si/SiO2 multiple quantum wells, Thin Solid Films 516, 6800 (2008).
  • R. Rölver, B. Berghoff, D. L. Bätzner, B. Spangenberg and H. Kurz, Lateral Si/SiO2 quantum well solar cells, Applied Physics Letters 92, 212108 (2008).
  • T. Mchedlidze, T. Arguirov, S. Kouteva-Arguirova, M. Kittler, R. Rölver, B. Berghoff, D. L. Bätzner and B. Spangenberg, Light-induced solid-to-solid phase transformation in Si nanolayers of Si/SiO2 multiple quantum wells, Physical Review B 77, 161304 (2008).
  • S.F. Feste, J. Knoch, D. Buca and S. Mantl, Fabrication of uniaxially strained silicon nanowires, Thin Solid Films 517, 320-321 (2008).
  • K.M. Indlekofer, R. Nemeth and J. Knoch, Many-body approach to the THz response of Wigner molecules in gated nanowire structures, Phys. Rev. B 77, 125436 (2008).
  • J. Appenzeller, J. Knoch, M.T. Björk, H. Riel, H. Schmid and W. Riess, Towards nanowire electronics (invited), IEEE Trans. Electron Dev. and Trans. Nanotechnol. 55, 2827-2845 (2008).
  • F. Lanzerath, M. Goryll, D. Buca, M. Trinkaus, S. Mantl, J. Knoch, U. Breuer, W. Skorupa, and B. Gyhselen, Investigation of boron activation and diffusion in silicon-on-insulator and strained-silicon-on-insulator using rapid thermal annealing and flash lamp annealing, J. Appl. Phys. 104, 044908 (2008).
  • M.T. Björk, J. Knoch, H. Schmid, H. Riel and W. Riess, Silicon nanowire tunneling field-effect transistors, Appl. Phys. Lett. 92, 193504 (2008).
  • J. Knoch, W. Riess and J. Appenzeller, Outperforming the conventional scaling rules in the quantum capacitance limit, IEEE Electron Dev. Lett. 29, 372-374 (2008).
  • H. Schmid, M.T. Björk, O. Hayden, J. Knoch, H. Riel, P. Rice, T. Topuria and W. Riess, Patterned epitaxial vapor-liquid-solid growth of silicon nanowires on Si(111) using silane, J. Appl. Phys. 103, 024304 (2008).
  • J. Knoch and J. Appenzeller, Tunneling phenomena in carbon nanotube field-effect transistors (invited), phys. stat. sol. a 205, 679-694 (2008).
  • M. Zhang, J. Knoch, S.-L. Zhang, S.F. Feste, M. Schröter and S. Mantl, Threshold voltage variation in SOI Schottky barrier MOSFETs, IEEE Trans. Electron Dev. 55, 858-865 (2008).

2007

  • J.-M. Wagner, K. Seino, F. Bechstedt, A. Dymiati, J. Mayer, R. Rölver, M. Först, B. Berghoff, B. Spangenberg and H. Kurz, Electronic band gap of Si/SiO2 quantum wells: Comparison of ab initio calculations and PL measurements, Journal of Vacuum Science and Technology A 25, 1500 (2007).
  • T. Arguirov, T. Mchedlidze, V. D. Akhmetov, S. Kouteva-Arguirova, M. Kittler, R. Rölver, B. Berghoff, M. Först, D. L. Bätzner and B. Spangenberg, Effect of laser annealing on crystallinity of the Si layers in Si/SiO2 multiple quantum wells, Applied Surface Science 254, 1083 (2007).
  • T. Mchedlidze, T. Arguirov, M. Kittler, R. Rölver, B. Berghoff, M. Först and B. Spangenberg, Structural and optical properties of Si/SiO2 multi-quantum wells, Physica E: Low-dimensional Systems and Nanostructures 38, 152 (2007).
  • J. Knoch, S. Mantl and J. Appenzeller, Impact of the dimensionality on the performance of tunneling FETs: Bulk-versus one-dimensional devices, Solid-State Electron. 51, 572-578 (2007).
  • J. Knoch, M. Zhang, S.F. Feste and S. Mantl, Dopant segregation in SOI Schottky-barrier MOSFETs, Microelectron. Engin. 84, 2563-2571 (2007).
  • J. Appenzeller, Y.-M. Lin, J. Knoch, Z. Chen and Ph. Avouris, 1/f noise in carbon nanotube devices – On the impact of contacts and device geometry, IEEE Trans. Nanotechnol. 6, 368-373 (2007).
  • K.M. Indlekofer, J. Knoch and J. Appenzeller, Understanding Coulomb effects in nanoscale Schottky-barrier FETs, IEEE Trans. Electron Dev. 54, 1502-1509 (2007).
  • M. Zhang, J. Knoch, J. Appenzeller and S. Mantl, Improved carrier injection in SOI Schottky barrier MOSFETs, IEEE Electron Dev. Lett. 28, 223-225 (2007).
  • J. Knoch, M. Zhang, J. Appenzeller and S. Mantl, Physics of ultrathin-body silicon-on-insulator Schottky-barrier field-effect transistors, Appl. Phys. A 87, 351-357 (2007).

2006

  • T. Arguirov, T. Mchedlidze, M. Kittler, R. Rölver, B. Berghoff, M. Först and B. Spangenberg, Residual stress in Si nanocrystals embedded in a SiO2 matrix, Applied Physics Letters 89, 053111 (2006).
  • K.M. Indlekofer, J. Knoch and J. Appenzeller, Quantum confinement corrections to the capacitance of gated one-dimensional nanostructures, Phys. Rev. B 74, 113310-113313 (2006).
  • J. Knoch, M. Zhang, S. Mantl and J. Appenzeller, On the performance of single-gated ultrathin body SOI Schottky-barrier MOSFETs, IEEE Trans. Electron Dev. 53, 1669-1674 (2006).
  • M. Zhang, J. Knoch, Q.T. Zhao, S. Lenk, U. Breuer and S. Mantl, Impact of dopant segregation on fully depleted Schottky-barrier SOI-MOSFETs, Solid-State Electron. 50, 594-600 (2006).
  • Y.-M. Lin, J. Appenzeller, J. Knoch, Z. Chen and Ph. Avouris, Low frequency current fluctuations in individual semiconducting single-walled carbon nanotubes, Nano Lett. 6, 930-936 (2006).

2005

  • M. Zhang, J. Knoch, Q.T. Zhao, A. Fox, S. Lenk and S. Mantl, Low temperature measurements of Schottky-barrier SOI-MOSFETs with dopant segregation, Electronics Lett. 41, 1085-1086 (2005).
  • J. Knoch, M. Zhang, Q.T. Zhao, S. Lenk, J. Appenzeller and S. Mantl, Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation, Appl. Phys. Lett. 87, 263505 (2005).
  • J. Appenzeller, Y.-M. Lin, J. Knoch, Z. Chen and Ph. Avouris, Comparing carbon nanotube transistor – The ideal choice: A novel tunneling device design, IEEE Trans. Electron Dev. 52, 2568-2576 (2005).
  • K.M. Indlekofer, J. Knoch and J. Appenzeller, Quantum kinetic description of Coulomb effects in one-dimensional nano-transistors, Phys. Rev. B 72, 125308 (2005).
  • Z. Chen, J. Appenzeller, J. Knoch, Y.-M. Lin and Ph. Avouris, The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors, Nano Lett. 5, 1497-1502 (2005).
  • J. Knoch, S. Mantl and J. Appenzeller, Comparison of transport properties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts, Solid-State Electron. 49, 73-76 (2005).
  • Y.-M. Lin, J. Appenzeller, J. Knoch and Ph. Avouris, High-performance carbon nanotube field-effect transistors with tunable polarities, IEEE Trans. Nanotechnol. 4, 1536-1544 (2005).

Conference Contributions

2015

  • H. Füser, A. L. Giesecke, A. Prinzen, S.Suckow, C. Porschatis, D. Schall, H. Lerch, M.M. Tarar, J. Bolten, T. Wahlbrink, K. Kurz: “56 Gb/s WDM transmitter module based on silicon microrings using comb lasers”, CLEO: Science and Innovations, CLEO-SI 2015 05/2015

2014

  • M.R. Müller, U. Künzelmann, S. Menzel, I Petrov, K. Kallis and J. Knoch, „Tackling Hillocks Growth after Aluminum CMP“, ICPT 2014.
  • J. Knoch, „Investigations on Band-to-Band Tunneling in 2D Materials“, NRW Nanoconference 2014.

2013

  • Safiei, A., Wolter, K., Nagel, M.Windgassen, H. , et al, “Evaluation and investigation of laser doping by a double-gaussian shaped beam profile”, 2013 IEEE 39th Photovoltaic Specialists Conference
  • Khandelwal, R., Windgassen, H., van Mölken, J. I., Pletzer, T. M. et al,”Comparison of large area high ohmic emitter silicon solar cells with standard screen-printed contacts”, 2013 IEEE 39th Photovoltaic Specialists Conference

2012

  • T. Grap, M. Müller and J. Knoch, Electrostatic Doping in Tunnel FETs, Europ. Solid-State Dev. Res. Conf., Bordeaux, 2012.
  • B. Min, S. Suckow, U. Yusufoglu, T. M. Pletzer and H. Kurz, Acceleration of 3D numerical simulation of silicon solar cell using thread parallelism, 12th International Conference on Numerical Simulation of Optoelectronic Devices, Shanghai, 2012, 107-108, DOI: 10.1109/NUSOD.2012.6316540
  • T. M. Pletzer, M. Lenz, H. Windgassen, and J. Knoch, Characterization of three-dimensional structures in silicon solar cells by spatially-resolved illuminated lock-in thermography, Proceedings of 38th IEEE Photovoltaic Specialist Conference, Austin/USA, June 3rd – 8th, 2012, in press
  • T. M. Pletzer, S. Suckow, E. F. R. Stegemann, H. Windgassen, D. L. Bätzner, and H. Kurz, Iron concentration in Czochralski silicon wafers after gettering by screen-printed emitters, 27th European Photovoltaic Solar Energy Conference and Exhibition, Frankfurt/Germany, September 24th – 28th, 2012, in press
  • M. Lenz, T. M. Pletzer, H. Windgassen, and J. Knoch, Investigation of structured doping regions in solar cell silicon by high temperature spatially-resolved lock-in thermography, 27th European Photovoltaic Solar Energy Conference and Exhibition, Frankfurt/Germany, September 24th – 28th, 2012, in press
  • R. Khandelwal, K. Grimzaite, H. Windgassen, T. M. Pletzer, R. Derix, and H. Kurz, ‘SASE’ solar cell: A simple and cost effective approach for selective emitter formation, 27th European Photovoltaic Solar Energy Conference and Exhibition, Frankfurt/Germany, September 24th – 28th, 2012, in press
  • B. Min, U. A. Yusufoglu, T. M. Pletzer, N. Koo, and H. Kurz, 3D simulation study of rear point contact solar cells with a thickness of 100 micron, 27th European Photovoltaic Solar Energy Conference and Exhibition, Frankfurt/Germany, September 24th – 28th, 2012, in press
  • B. Min, S. Suckow, U. A. Yusufoglu, T. M. Pletzer, and H. Kurz, Resource optimization for numerical simulation of silicon solar cell using thread parallelism, 27th European Photovoltaic Solar Energy Conference and Exhibition, Frankfurt/Germany, September 24th – 28th, 2012, in press
  • U. A. Yusufoglu, B. Min, T. M. Pletzer, J. van Mölken, and H. Kurz, Simulation of solar modules with an extended approach to cell sorting considering optical and electrical parameters, 27th European Photovoltaic Solar Energy Conference and Exhibition, Frankfurt/Germany, September 24th – 28th, 2012, in press
  • U. Plachetka, H. Windgassen, J. W. Kim, N. Koo, F. Schlachter, C. Nowak, T. M. Pletzer, C. Moormann, and H. Kurz, Enhanced performance of multi-crystalline solar cells through single step nanoimprint processing, 27th European Photovoltaic Solar Energy Conference and Exhibition, Frankfurt/Germany, September 24th – 28th, 2012, in press
  • M. Nagel, A. Safiei, T. M. Pletzer, and H. Kurz, Active Terahertz near-field probes for high-resolution free-carrier density imaging applications, 37th International Conference on Infrared, Terahertz and Millimeter Waves, Wollongong/Australia, September 23th – 28th, 2012, in press
  • U. A. Yusufoglu, B. Min, T. M. Pletzer, and H. Kurz, Simulation von Photovoltaikmodulen unter Berücksichtigung neuartiger Sortierverfahren nach elektrischen und optischen Parametern, Proceedings of 27th Symposium Photovoltaische Solarenergie, Bad Staffelstein/Germany, February 29th – March 2nd, 2012, Article No. 083
  • B. Berghoff, N. Wilck, S. Suckow, S. Nordmann, B. Spangenberg and J. Knoch, Si/SiO2 multiple quantum wells for all-silicon tandem cells, in Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials (SSDM 2012), p. 997 (2012).

2011

  • T. M. Pletzer, M. Thore, S. Suckow, B. Mayer, J. van Mölken, A. Safiei, H. Windgassen, R. Bleidiessel and H. Kurz, Efficiency increase of lossy solar cells by laser postprocessing and detailed analysis of the current-voltage characteristics, Proceedings of 37th IEEE Photovoltaic Specialist Conference, Seattle, 001662-001667 (2011). DOI: 10.1109/PVSC.2011.6186275.
  • A. Safiei, T. M. Pletzer, R. Khandelwal, H. Windgassen, R. Bleidiessel, and H. Kurz, Selective emitter on multicrystalline Si solar cells by laser doping from phosphosilicate glass, Proceedings of 26th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg/Germany, September 5th – 9th, 2011, Pages 1229-1234, DOI: 10.4229/26thEUPVSEC2011-2BV.1.4
  • R. Khandelwal, H. Windgassen, T. M. Pletzer, A. Safiei, R. Bleidiessel, and H. Kurz, Development and characterisation of self-aligned selective emitter process for mc-Si solar cells using commercial PECVD batch reactor, Proceedings of 26th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg/Germany, September 5th – 9th, 2011, Pages 1224-1228, DOI: 10.4229/26thEUPVSEC2011-2BV.1.3
  • U. Plachetka, C. Moormann, N. Koo, J. Kim, T. M. Pletzer, H. Windgassen, and H. Kurz, Nanoimprinted anti reflection texturing for silicon solar cells, Proceedings of 26th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg/Germany, September 5th – 9th, 2011, Pages 1345-1348, DOI: 10.4229/26thEUPVSEC2011-2BV.1.40

2010

  • J. Knoch, Nanowire Tunnel FETs – Device Structure, Transistor Dimension and Material Choice, MRS Conf. Proc. 2010.
  • S.F. Feste, J. Knoch, D. Buca, Q.T. Zhao, T. Schäpers and S. Mantl, Effective mass and I-V characterization of biaxially tensile strained SOI MOSFETs, Internat. Conf. Ultimate Integrat. Silicon, Conference Digest, 2010.
  • S.F. Feste, T. Schäpers, D. Buca, Q.T. Zhao, J. Knoch, M. Bouhassoune, A. Schindlmayr and S. Mantl, Effective mass, mobility, on-current and transconductance of FETs on SSOI and SOI, ECS Meeting, Vancouver, 2010.
  • T. M. Pletzer, E. F. Stegemann, H. Windgassen, D. L. Bätzner, R. Bleidiessel, and H. Kurz, Gettering efficacy of screen-printed emitters in multicrystalline silicon for solar cells with selective emitters, Proceedings of 5th World Conference on Photovoltaic Energy Conversion, Valencia/Spain, September 6th – 10th, 2010, Pages 2039-2042, DOI: 10.4229/25thEUPVSEC2010-2CV.2.90
  • B. Mayer, T. M. Pletzer, H. Windgassen, A. Safiei, R. Bleidiessel, and H. Kurz, Characterisation of selective emitter solar cells by spatially-resolved light-induced lock-in thermography, Proceedings of 5th World Conference on Photovoltaic Energy Conversion, Valencia/Spain, September 6th – 10th, 2010, Pages 2051-2054, DOI: 10.4229/25thEUPVSEC2010-2CV.2.93
  • A. Safiei, T. M. Pletzer, H. Windgassen, R. Bleidiessel, and H. Kurz, Characterization of selective emitter formation for industrial application in multicrystalline silicon wafers using laser doping, Proceedings of 5th World Conference on Photovoltaic Energy Conversion, Valencia/Spain, September 6th – 10th, 2010, Pages 2047-2050, DOI: 10.4229/25thEUPVSEC2010-2CV.2.92

2009

  • B. Berghoff, S. Suckow, R. Rölver, N. Wilck, B. Spangenberg and H. Kurz, Si/SiO2 quantum well solar cells based on lateral charge carrier transport, in Proceedings of the 24th European Photovoltaic Solar Energy Conference, p. 388 (2009).
  • S. Suckow, B. Berghoff, B. Spangenberg and H. Kurz, Comparison of measurement and simulation of charge transport in selective energy contacts based on Si quantum dots, in Proceedings of the 24th European Photovoltaic Solar Energy Conference, p. 545 (2009).
  • L.O Keller, K.T. Kallis, H. Fiedler and J. Knoch, Towards nano-fin based mercury-sensors, Proc. 2009 Spanish Conf. Electron Dev., 342-344 (2009).
  • M.T. Björk, H. Schmid, J. Knoch, K. Moselund, H. Ghoneim, W. Riess and H. Riel, Doping limits and dopant ionization energy shifts in silicon nanowires, 2009 Silicon nanoelectronics workshop, VLSI Symposium, Kyoto, 2009.
  • J. Knoch, Optimizing tunnel FET performance – impact of device structure, transistor dimensions and choice of material, 2009 VLSI-TSA Symposium, Technical Digest, 2009.
  • H. Ghoneim, J. Knoch, H. Riel, D. Webb, M.T. Björk, S. Karg, E. Lörtscher, H. Schmid and W. Riess, Interface engineering for the suppression of ambipolar behavior in Schottky-barrier MOSFETs , Ultimate Integration of Silicon, ULIS 2009, Conference Digest, 69-72 (2009).
  • S.F. Feste, J. Knoch, S. Habicht, D. Buca, Q.T. Zhao and S. Mantl, Performance enhancement of biaxially-tensile strained Si NW-nFETs fabricated by lateral strain relaxation of SSOI, Ultimate Integration of Silicon, ULIS 2009, Conference Digest, 109-112 (2009).
  • T. M. Pletzer, E. F. Stegemann, H. Windgassen, D. L. Bätzner, and H. Kurz, Extensive investigation and characterisation of solar cells with screen-printed emitters using phosphorus dopant pastes, Proceedings of 24th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg/Germany, September 21st – 25th, 2009, Pages 2080-2083, DOI: 10.4229/24thEUPVSEC2009-2DV.1.25

2008

  • B. Berghoff, R. Rölver, D. L. Bätzner, B. Spangenberg, H. Kurz, A. Dimyati, A. Sologubenko and J. Mayer, Confinement and Transport in Silicon Based Quantum Structures, in Proceedings of the 33rd Photovoltaic Specialists Conference (2008).
  • C. Sandow, J. Knoch, C. Urban and S. Mantl, Improving the performance of band-to-band tunneling transistors by tuning the gate oxide and dopant concentration, Device Research Conference, Conference Digest, 2008.
  • J. Knoch, M.T. Björk, H. Riel, H. Schmid and W. Riess, One-dimensional nanoelectronic devices: towards the quantum capacitance limit, Device Research Conference 2008, Conference Digest 2008.
  • S.F. Feste, M. Zhang, J. Knoch, S.-L. Zhang and S. Mantl, Variability in SOI Schottky Barrier MOSFETs, ULIS 2008, Conference Digest, 2008.
  • S.F. Feste, M. Zhang, J. Knoch, U. Breuer and S. Mantl, Scaling issues of Schottky barrier metal-oxide-semiconductor field-effect transistors with dopant segregation, MRS Spring Meeting, San Francisco, 2008.
  • J. Knoch, J. Appenzeller, M.T. Björk, H. Riel, H. Schmid and W. Riess, On the scaling behavior of nanowire/tube FETs towards the quantum capacitance limit, MRS Spring Meeting, San Francisco, 2008.
  • T. M. Pletzer, E. Stegemann, H. Windgassen, D. L. Bätzner, and H. Kurz, Investigation of gettering efficacy and trap density in multicrystalline silicon wafers with screen-printed emitters, Proceedings of 23rd European Photovoltaic Solar Energy Conference and Exhibition, Valencia/Spain, September 1st – 5th, 2008, Pages 1812-185, DOI: 10.4229/23rdEUPVSEC2008-2CV.5.69
  • D. L. Bätzner, H. Windgassen, L. Janßen, M. Scherff, A. G. Ulyashin, T. M. Pletzer, and H. Kurz, High aspect ratio with low temperature screen printed contacts in Cz-Si solar cells, Proceedings of 23rd European Photovoltaic Solar Energy Conference and Exhibition, Valencia/Spain, September 1st – 5th, 2008, Pages 1514-1517, DOI: 10.4229/23rdEUPVSEC2008-2CV.4.57

2007

  • B. Berghoff, R. Rölver, D. L. Bätzner, B. Spangenberg and H. Kurz, Temperature dependent I-V measurements on resonant tunneling structures based on silicon quantum dots for energy selective contacts, in Proceedings of the 22nd European Photovoltaic Solar Energy Conference, p. 571 (2007).
  • R. Rölver, B. Berghoff, D. L. Bätzner, B. Spangenberg and H. Kurz, Improved Charge Transport in Si/SiO2 Multiple Quantum Wells for All Silicon Tandem Solar Cells Using a New Nanoporous Barrier Material, in Proceedings of the 22nd European Photovoltaic Solar Energy Conference, p. 548 (2007).
  • K.M. Indlekofer, R. Nemeth and J. Knoch, THz probe for nanowire FETs: simulation of few-electron fingerprints, Device Research Conf., Conference Digest, 179-180 (2007).
  • M.T. Björk, O. Hayden, H. Riel, J. Knoch, H. Schmid and W. Riess, Impact ionization FETs based on silicon nanowires, Device Research Conf. Conference Digest, 171-172 (2007).
  • J. Knoch, M.T. Bjoerk, H. Riel, H. Schmid, M. Enderlein, H. Ghoneim and W. Riess, Transport in heterostructure nanowire tunneling FETs, The Second Internat. Conf. One-dimensional Nanomaterials. Malmö, 2007.
  • H. Schmid, M.T. Björk, O. Hayden, J. Knoch, H. Riel and W. Riess, Epitaxial Vapor-Liquid-Solid growth of silicon nanowires on Si(111) using silane, 13th Internat. Conf. on Surf. Science, Stockholm, 2007.
  • M. Roeckerath, J. Knoch, T. Heeg, J. Schubert and S. Mantl, Preparation and characterization of MOSFETs with gadolinium scandate as alternative gate dielectric, MRS Spring Meeting, San Francisco, 2007.
  • T. Pletzer, E. Stegemann, L. Janßen, H. Windgassen, D. L. Bätzner, and H. Kurz, Selective emitters by phosphorus screen-printing for industrial processing of very thin mc-Si solar cells, Proceedings of 22nd European Photovoltaic Solar Energy Conference and Exhibition, Milan/Italy, September 3rd – 7th, 2007, Pages 1604-1607
  • D. L. Bätzner, H. Windgassen, A. Sauer, B. Hadam, L. Janßen, and T. Pletzer, Acidic wet chemical texturisation of mc-Si solar cells, Proceedings of 22nd European Photovoltaic Solar Energy Conference and Exhibition, Milan/Italy, September 3rd – 7th, 2007, Pages 1715-1718

2006

  • J. Appenzeller, J. Knoch, E. Tutuc, M. Reuter and S. Guha, Dual-gate silicon nanowire transistors with nickel silicide contacts, Internat. Electron Dev. Meeting, Technical Digest, 2006.
  • J. Knoch, M. Zhang, Q.T. Zhao and S. Mantl, Schottky-barrier height tuning using dopant segregation in Schottky-barrier MOSFETs on fully-depleted SOI, MRS 2006 Conference Proceedings.
  • Q.T. Zhao, M. Zhang, J. Knoch and S. Mantl, Tuning of Schottky barrier heights by silicidation induced impurity segregation, Proc. Internat. Workshop Junction Technol., Conference Digest, 2006.
  • K.M. Indlekofer, J. Knoch and J. Appenzeller, Seamless transition from the single-electron regime to field-effect-transistor operation of nanoscale Schottky-barrier FETs, Device Research Conference, Conference Digest, 253-254 (2006).
  • J. Knoch, S. Mantl and J. Appenzeller, The impact of dimensionality on the performance of tunneling FETs, 7th Internat. Conf. on Ultimate Integration of Silicon, Conference Digest, 47-50 (2006).
  • J. Knoch, M. Zhang, Q.T. Zhao, J. Appenzeller and S. Mantl, Improving the carrier injection in Schottky-barrier SOI-MOSFETs, IEEE Workshop on Advanced Electron Devices, Duisburg, 2006.
  • Q.T. Zhao, M. Zhang, J. Knoch and S. Mantl, Tuning of Schottky barrier heights by silicidation induced impurity segregation, Internat. Workshop Junction Technol., Shanghai, 2006.
  • J. Knoch, M. Zhang, Q.T. Zhao and S. Mantl, Schottky-barrier height tuning using dopant segregation in Schottky-barrier MOSFETs on fully-depleted SOI, MRS Spring Meeting, San Francisco, 2006.
  • T. Pletzer, H. Windgassen, E. Stegemann, L. Janßen, D. L. Bätzner, and H. Kurz, Screen printed phosphorus emitter for industrial thin multi-crystalline silicon solar cells, Proceedings of 21st European Photovoltaic Solar Energy Conference and Exhibition, Dresden/Germany, September 4th – 8th, 2006, Pages 838-841

2005

  • M. Zhang, J. Knoch, Q.T. Zhao, S. Lenk, U. Breuer and S. Mantl, Schottky barrier height modulation using dopant segregation in Schottky-barrier SOI MOSFETs, European Solid-State Device Research Conference, Conference Digest, 457-460 (2005).
  • J. Knoch and J. Appenzeller, A novel concept for field-effect transistors – the tunneling carbon nanotube FET, Device Research Conference, Conference Digest, 153-156 (2005).
  • Z. Chen, J. Appenzeller, J. Knoch, Y.-M. Lin and Ph. Avouris, Impact of the nanotube diameter on the performance of CNFETs, Device Research Conference, Conference Digest, 237-238 (2005).
  • M. Zhang, J. Knoch, Q.T. Zhao, S. Lenk, J. Appenzeller, U. Breuer and S. Mantl, Dopant segregation in Schottky-barrier SOI-MOSFETs, Proceedings of the 6th Internat. Conf. on Ultimate Integration of Silicon, 23-26 (2005).
  • Z. Chen, J. Appenzeller, J. Knoch, Y.-M. Lin and Ph. Avouris, Diameter dependence of carbon nanotube transistor performance, 2005 APS March Meeting, 2005.
  • K. Seibel, L. Schöler, M. Walder, H. Schäfer, A. Schäfer, T. Pletzer, R. Püschl, M. Waidelich, H. Ihmels, D. Ehrhardt, and M. Böhm, A novel technology to create monolithic instruments for micro total analysis systems, Proceedings of Material Research Society Spring Meeting, San Francisco/USA, March 28th – April 1st, 2005, Volume: 869, Pages 119-124, DOI: 10.1557/PROC-869-D3.8
  • H. Schäfer, K. Seibel, M. Walder, L. Schöler, T. Pletzer, M. Waidelich, H. Ihmels, D. Ehrhardt, and M. Böhm, Monolithic integrated optical detection for mircofluidic systems using thin-film photodiodes based on amorphous silicon, Proceedings of 18th IEEE International Conference on Micro Electro Mechanical Systems, Miami/USA, January 30th – February 4th, 2005, Pages 758-761, ISBN (printed): 0-7803-8732-5. ISSN (electronic): 1084-6999, DOI: 10.1109/MEMSYS.2005.1454040

2004

  • H. Schäfer, K. Seibel, M. Walder, L. Schöler, T. Pletzer, H. Ihmels, M. Schmittel, D. Ehrhardt, and M. Böhm, A micro cytometer with monolithically integrated optical detectors based on amorphous silicon, Proceedings of 8th International Conference on Miniaturized Systems for Chemistry and Life Sciences, Malmö/Sweden, September 26th – 30th, 2004, Pages 443-445

Invited Talks

2014

  • J. Knoch, „Band-to-band tunnel FETs in one and two-dimensional materials“ (invited), Energy, Materials, Nanotechnlogogy, Fall Meeting 2014, Orlando.

2013

  • J. Knoch, „Electrostatic Doping in Carbon-based Nanoelectronics Devices“ (invited), Workshop on Design with Nanoscale Functionality-Enhanced devices, Lausanne, 2013.
  • J. Knoch, “Tunnel FETs – Device Principles and Realizations”, Seminar Talk, published on NanoHub, 2013.
  • J. Knoch, “Gate-Controlled Doping in Carbon-Based FETs” (invited), Joint MRS-JSAP Meeting 2013, Kyoto (2013)

2012

  • J. Knoch, M. Müller, New Materials and Architectures for Beyond CMOS Devices, Brazilian MRS, Florianopolis, 2012.
  • J. Knoch, III-V Nanowire FETs, CMOS Emerging Technologies, Vancouver, 2012.
  • B. Berghoff, Si/SiO2 Multiple Quantum Wells for All-Silicon Tandem Cells, 2012 International Conference on Solid State Devices and Materials (SSDM 2012), Kyoto, 2012.
  • J. Knoch, Tunnel FET architectures and device concepts for steep slope switches, SINANO Summer School, Bertinoro, 2012.
  • B. Berghoff, Si nanolayers for 3rd generation photovoltaics, 4th Sino-German Symposium „The Silicon Age: Silicon for Microelectronics, Photonics, Photovoltaics and other Applications“, Berlin, September 2012.
  • S. Suckow, H. Kurz, Nanotechnologie in der zukünftigen PV-Generation: lateral kontaktierte Multi-Quantentöpfe, Photovoltaik-Tag NRW, Duisburg, 2012.
  • U. A. Yusufoglu, T. M. Pletzer, A. Halm, L. Joseph, C. Comparotto, R. Kopecek, B. Min, and H. Kurz, Importance of precise sorting of bifacial solar cells for optimal bifacial module performance, 1st Workshop on Bifacial Solar Cells, Konstanz/Germany, April 23rd – 24th, 2012
  • T. M. Pletzer, H. Kurz, Nanotechnologie für konventionelle Solarzellen: Textur, Photovoltaik-Tag NRW, Duisburg, June 27th, 2012

2011

  • J. Knoch, Tunnel FETs for low power nanoelectronics – device physics, challenges and perspectives, seminar talk at Tyndall National Institute, Cork, 2011.
  • J. Knoch, III-V Nanowire FETs – A Simulation Study, Heraeus Seminar, Bad Honnef, 2011.
  • J. Knoch, Materials for Future Nanoelectronics Devices, Seminar Talk, Paul Drude Institute, Berlin, 2011.
  • J. Knoch, Materials for Future Nanoelectronics Devices, Seminar Talk, University of Göttingen, 2011.
  • N. Wilck, Laterally contacted pin Si/SiO2 multi quantum well solar cells, Low Carbon Earth Summit – 2011 (LCES-2011), Dalian, 2011.
  • B. Berghoff, Silicon Quantum Dots for Third Generation Photovoltaics, Low Carbon Earth Summit – 2011 (LCES-2011), Dalian, 2011.
  • B. Berghoff, H. Kurz, Nanotechnologien in der zukünftigen PV-Generation, Photovoltaik-NRW Kompakt, Duisburg, 2011.

2010

  • N. Wilck, Laterally contacted Si/SiO2 multi quantum well solar cells, Nanofair – 8th International Nanotechnology Symposion, Dresden, 2010.
  • J. Knoch, Reaching the Quantum Capacitance Limit – Dead End or New Scaling Path?, Dev. Res. Conf Rump Session, 2010.
  • T. M. Pletzer, Selektive Emitter mittels Siebdrucktechnologie für multikristalline Silizium-Solarzellen, Colloquium of the institute physical electronics IPE, Stuttgart/Germany, July 19th, 2010

2009

  • J. Knoch, Nanowires/Nanotubes for Future Field-Effect Transistors – Small is Beautiful, Seminar Talk at the University of Duisburg-Essen, 2009.
  • J. Knoch, On the performance of Tunnel FETs – Impact of Device Structure, Transistors Dimensions and Choice of Material, NODE Workshop, Zurich 2009.
  • J. Knoch, On the Performance of Tunnel FETs – Impact of Device Structure, Transistors Dimensions and Choice of Material, Nanowire Workshop, Lund, 2009.
  • J. Knoch, On the Performance of Tunnel FETs – Impact of Device Structure, Transistors Dimensions and Choice of Material, 2009 VLSI-TSA, Hsinchu.

Books and Book Chapters

2014

  • J. Knoch, „Tunneling Field-Effect Transistors_ Challenges and Perspective“, in Intelligent Integrated Systems: Devices, Technologies, and Architectures, Ed. S. Deleonibus, Pan Stanford, 2014.

2013

  • J. Knoch, Tunneling field-effect transistors, Handbook of Intelligent Nanosystems, WSPC-Pan Stanford (Singapore), Ed. Simon Deleonibus, 2013.
  • J. Knoch, “One-Dimensional Field-Effect Transistors”, in One-Dimensional Nanostructures: Principles and Applications, Ed. T. Zhai, J. Yao, Wiley & Sons, 2013.

2012

  • J. Knoch, S.F. Feste, and S. Mantl, Metal-Oxide-Semiconductor Field-Effect Transistors: Novel materials and alternative concepts,Nanoelectronics and Information Technology, Ed.Rainer Waser, 3. Edition, Wiley-VCH, 2012.
  • J. Knoch, One-dimensional field-effect transistors, One-Dimensional Nanostructures: Principles and Applications, John Wiley & Sons, Inc., Hoboken, New Jersey, USA, Ed. Y. Jiannian und T. Zhai, 2012.

2011

  • J. Knoch, and J. Appenzeller, Electronic transport in carbon nanotube field-effect transistors, Molecular and Nanotubes, Ed. O. Hayden and K. Nielsch, Springer Verlag 2011.

2007

  • J. Knoch and H. Lüth, Semiconductor nanostructures and devices , Nanoscaled Semiconductor-on-Insulator Structures and Devices, Kluwer Academic Publisher, 2007.

2006

  • J. Knoch and J. Appenzeller, Carbon nanotube field-effect transistors – the importance of being small , Hardware Drivers for Ambient Intelligence, Kluwer Academic Publisher, 371-402, 2006.

Patents

  • J. Knoch and K. Kallis, Micromechanical pressure sensor and method for producing the same, WO/2012/095117.
  • M.T. Björk, J. Knoch, H. Riel, W. Riess, H. Schmid, Semiconductor device with screening coating to inhibit dopant deactivation, submitted 2010.
  • M.T. Björk, S. Karg, J. Knoch, H. Riel, W. Riess, H. Schmid, Metal-oxide-semiconductor device including an energy filter, US 7759729B2, 2010.
  • M.T. Björk, J. Knoch, H. Riel, W. Riess, H. Schmid, Nanoelectronic Device, US20100072460.
  • M.T. Björk, O. Hayden, J. Knoch, E. Lörtscher, H. Riel, W. Riess, H. Schmid, Impact Ionization Field-Effect Transistor, US20110049476.
  • M.T. Björk, S. Karg, J. Knoch, H. Riel, W. Riess, P. Solomon, Tunnel Field Effect Devices, US20110049474.
  • W. Riess, M.T. Björk, J. Knoch, H. Riel, S. Karg, H. Schmid, Metal-oxide-semiconductor device including a multiple-layer energy filter, US 2009/0200540 A1.
  • J. Appenzeller, J. Knoch, Method of fabricating a tunneling nanotube field effect transistor, US2005274992, EP1754262

Dissertations

2012

  • S. Suckow, Simulation der Kristallisation amorpher Silizium-Quantenschichten
    mittels Femtosekunden-Laserpulsen, Verlag Dr. Hut, 2012. ISBN 978-3-8439-0962-4
  • A. Safiei, Laserprozessierung von multikristallinen Silizium Solarzellen und
    die Entwicklung selektiver Emitter, Verlag Dr. Hut, 2012. ISBN 978-3-8439-0865-8

2010

  • B. Berghoff, Herstellung und Charakterisierung von Silizium-Quantenstrukturen, Verlag Dr. Hut, 2010. ISBN 978-3-86853-699-7
  • T. M. Pletzer, Die multikristalline Silizium-Solarzelle: Die Entwicklung zum selektiven Emitter, Verlag Dr. Hut, 2010. ISBN 978-3-86853-558-7