Person
Prof. Dr. rer. nat.Joachim Knoch
UniversitätsprofessorLehrstuhl für Halbleitertechnik und Institut für Halbleitertechnik
Adresse
Gebäude: 4243
Raum: 24C205
Sommerfeldstr. 18
52074 Aachen
Lebenslauf
Ausbildung
|
05/1998 - 09/2001 |
Promotion in Physik, RWTH Aachen |
| 10/1992 - 04/1998 |
Physikstudium, RWTH Aachen |
|
09/1994 - 04/1995 |
Queen Mary, University of London, England |
Berufserfahrung
|
seit 5/2011 |
W3-Professor, |
|
09/2008 - 04/2011 |
W2-Professor, |
|
11/2006 - 8/2008 |
Wissenschaftlicher Mitarbeiter, IBM Forschungslabor Zürich, Schweiz |
|
01/2003 - 10/2006 |
Wissenschaftlicher Mitarbeiter, Forschungszentrum Jülich |
|
09/2001 - 12/2002 |
Post-Doktorand, Massachusetts Institute of Technology, USA |
|
05/1998 - 09/2001 |
Doktorand, RWTH Aachen |
Auszeichnungen
|
2009 |
IBM Technical Accomplishment |
| 2001 | DFG-Forschungsstipendium für Postdoktoranden |
| 2001 | Borchers-Plakette für eine exzellente Doktorarbeit, RWTH Aachen |
| 1998 | Spingorum-Denkmünze, RWTH Aachen |
Forschungsinteressen
Quantentechnologie, Nanelektronik, nanoelektromechanische Systeme und neuromorphe Systeme
Betreute Abschlussarbeiten
| (1) | Stefan Scholz, Promotion 2019 |
| (2) | Sven Nordmann, Promotion 2019 |
| (3) |
Markus Lenz, Promotion 2018 |
| (4) | Felix Riederer, Promotion 2018 |
| (5) | Sergej Fischer, Promotion 2017 |
| (6) | Tobias Finge, Promotion 2017 |
| (7) | Thomas Grap, Promotion 2017 |
| (8) | Marcel Müller, Promotion 2016 |
Publikationen
| Quelle | Autor(en) |
|---|---|
| [Beitrag zu einem Tagungsband, Fachzeitschriftenartikel] Improved performance of FDSOI FETs at cryogenic temperatures by optimizing ion implantation into silicide In: Solid state electronics : SSE, 208, 108733, 2023 [DOI: 10.1016/j.sse.2023.108733] | Han, Yi (Corresponding author) Sun, Jingxuan Radu, Ionut Knoch, Joachim Grützmacher, Detlev Zhao, Qing-Tai |
| [Fachzeitschriftenartikel] Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems In: IEEE journal of the Electron Devices Society, 11, 432-437, 2023 [DOI: 10.1109/JEDS.2023.3297855] | Frahm, T. (Corresponding author) Buttberg, M. Gvozdev, G. Müller, R. A. Chen, S. Sun, Bin Raffauf, L. Menzel, S. Valov, I. Wouters, D. Waser, Rainer Knoch, J. |
| [Buchbeitrag, Beitrag zu einem Tagungsband] Reaction-diffusion model for hydrogen release from PECVD silicon nitride In: 2023 IEEE International Interconnect Technology Conference (IITC) & IEEE Materials for Advanced Metallization Conference (MAM), 3 Seiten, 2023 [DOI: 10.1109/IITC/MAM57687.2023.10154702] | Dani, Prafullkrishna (Corresponding author) Rizzi, Leo (Corresponding author) Franz, Jochen (Corresponding author) Knoch, Joachim (Corresponding author) |
| [Fachzeitschriftenartikel] Fabrication of ultrasmall si encapsulated in silicon dioxide and silicon nitride as alternative to impurity doping In: Physica status solidi / A, 220 (13), 2300066, 2023 [DOI: 10.1002/pssa.202300066] | Frentzen, Michael (Corresponding author) Michailow, Michail Ran, Ke Wilck, Noel Mayer, Joachim Smith, Sean C. König, Dirk Knoch, Joachim |
| [Buchbeitrag, Fachzeitschriftenartikel] Miniaturized pH-Sensitive Field-Effect Capacitors with Ultrathin Ta2O5 Films Prepared by Atomic Layer Deposition In: Physica status solidi / A, 219 (8), 2100660, 2022 [DOI: 10.1002/pssa.202100660] | Molinnus, Denise Iken, Heiko Johnen, Anna Lynn Richstein, Benjamin Hellmich, Lena Poghossian, Arshak Knoch, Joachim Schöning, Michael J. (Corresponding author) |
| [Buchbeitrag, Beitrag zu einem Tagungsband] Cryogenic Steep Slope Field-Effect Transistors In: 2022 IEEE Silicon Nanoelectronics Workshop (SNW), 2 Seiten, 2022 [DOI: 10.1109/SNW56633.2022.9953898] | Knoch, Joachim Richstein, Benjamin Han, Y. König, D. Frentzen, Michael Hellmich, Lena Klos, Jan Scholz, Stefan Zhao, Q. T. |
| [Fachzeitschriftenartikel] Disentangling ionic and electronic contributions to the switching dynamics of memristive Pr0.7Ca0.3MnO3/Al devices by employing a two-resistor model In: Physical review materials, 6 (9), 095002, 2022 [DOI: 10.1103/PhysRevMaterials.6.095002] | Gutsche, Alexander (Corresponding author) Hambsch, Sebastian Branca, Nuno Casa Dittmann, Regina (Corresponding author) Scholz, Stefan Knoch, Joachim |
| [Fachzeitschriftenartikel] Interface Engineering for Steep Slope Cryogenic MOSFETs In: IEEE electron device letters, 43 (12), 2149-2152, 2022 [DOI: 10.1109/LED.2022.3217314] | Richstein, B. (Corresponding author) Han, Y. Zhao, Q. Hellmich, L. Klos, J. Scholz, S. Schreiber, Lars R. Knoch, J. |
| [Fachzeitschriftenartikel] Steep Switching Si Nanowire p-FETs With Dopant Segregated Silicide Source/Drain at Cryogenic Temperature In: IEEE electron device letters, 43 (8), 1187-1190, 2022 [DOI: 10.1109/LED.2022.3185781] | Han, Yi (Corresponding author) Sun, Jingxuan Richstein, Benjamin Allibert, Frederic Radu, Ionut Bae, Jin-Hee Grützmacher, Detlev Knoch, Joachim Zhao, Qing-Tai (Corresponding author) |
| [Buchbeitrag, Beitrag zu einem Tagungsband] NEUROTEC I: Neuro-inspired Artificial Intelligence Technologies for the Electronics of the Future In: Proceedings of the 2022 Design, Automation & Test in Europe Conference & Exhibition (DATE 2022) : 14-23 March 2022, online, virtual platform / DATE '22 - Design, Automation and Test in Europe Conference ; editors: Cristiana Bolchini, Ingrid Verbauwhede and Ioana Vatajelu, 957-962, 2022 [DOI: 10.23919/DATE54114.2022.9774755] | Galicia, Melvin Menzel, Stephan Merchant, Farhad Müller, Maximilian Chen, Hsin-Yu Zhao, Qing-Tai Cüppers, Felix Jalil, Abdur R. Shu, Qi Schüffelgen, Peter Mussler, Gregor Funck, Carsten Marco Lanius, Christian Wiefels, Stefan von Witzleben, Moritz Alexander Bengel, Christopher Reinhard Kopperberg, Nils Ziegler, Tobias Ahmad, R. Walied Krüger, Alexander Pöhls, Leticia Dittmann, Regina Hoffmann-Eifert, Susanne Rana, Vikas Grützmacher, Detlev Wuttig, Matthias Wouters, Dirk J. Vescan, Andrei Gemmeke, Tobias Knoch, Joachim Lemme, Max C. Leupers, Rainer Waser, Rainer |
| [Fachzeitschriftenartikel] Characterization of fully silicided source/drain SOI UTBB nMOSFETs at cryogenic temperatures In: Solid state electronics, 192, 108263, 2022 [DOI: 10.1016/j.sse.2022.108263] | Han, Yi (Corresponding author) Xi, Fengben Allibert, Frederic Radu, Ionut Prucnal, Slawomir Bae, Jin-Hee Hoffmann-Eifert, Susanne Knoch, Joachim Grützmacher, Detlev Zhao, Qing-Tai |
| [Fachzeitschriftenartikel] Direct Electroplating on Indium-Tin-Oxide-Coated Textured and Polished Silicon Substrates via Transition Metal Alloyed Interlayers In: Journal of the Electrochemical Society, 169 (5), 052503, 2022 [DOI: 10.1149/1945-7111/ac690b] | Politze, Jochen (Corresponding author) Scholz, Stefan Windgassen, Horst Schmitz, Christian Ding, Kaining Duan, Weiyuan Knoch, Joachim |
| [Fachzeitschriftenartikel] Sub-Linear Current Voltage Characteristics of Schottky-Barrier Field-Effect Transistors In: IEEE transactions on electron devices, 69 (5), 2243-2247, 2022 [DOI: 10.1109/TED.2022.3161245] | Knoch, Joachim (Corresponding author) Sun, Bin |
| [Fachzeitschriftenartikel] Delineating charge and capacitance transduction in system-integrated graphene-based BioFETs used as aptasensors for malaria detection In: Biosensors and bioelectronics, 208, 114219, 2022 [DOI: 10.1016/j.bios.2022.114219] | Figueroa-Miranda, Gabriela Liang, Yuanying Suranglikar, Mohit Stadler, Matthias Samane, Nagesh Tintelott, Marcel Lo, Young Tanner, Julian A. Vu, Xuan Thang Knoch, Joachim Ingebrandt, Sven Offenhäusser, Andreas Pachauri, Vivek (Corresponding author) Mayer, Dirk (Corresponding author) |
| [Buchbeitrag, Beitrag zu einem Tagungsband] Impact of the Backgate on the Performance of SOI UTBB nMOSFETs at Cryogenic Temperatures In: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) : 1-3 Sept. 2021, 2021 [DOI: 10.1109/EuroSOI-ULIS53016.2021.9560182] | Han, Yi (Corresponding author) Xi, Fengben Allibert, Frederic Radu, Ionut Prucnal, Slawomir Bae, Jin-Hee Hoffmann-Eifert, Susanne Knoch, Joachim Grützmacher, Detlev Zhao, Qing-Tai |
| [Abstract] Employing CMOS technology on silicon for a scalable electron-spin qubit architecture In: APS March Meeting, 2021 | Klos, Jan Sun, Bin Kindel, Sebastian David Hellmich, Lena Knoch, Joachim Schreiber, Lars |
| [Buchbeitrag, Fachzeitschriftenartikel] Silicon Nitride Interface Engineering for Fermi Level Depinning and Realization of Dopant-Free MOSFETs In: Micro, 1 (2), 228-241, 2021 [DOI: 10.3390/micro1020017] | Richstein, Benjamin (Corresponding author) Hellmich, Lena Knoch, Joachim |
| [Fachzeitschriftenartikel] Modeling and Prediction of Hydrogen-Assisted Morphological Evolution in Silicon Utilizing a Level-Set Approach In: Journal of microelectromechanical systems : JMEMS, 30 (6), 950-957, 2021 [DOI: 10.1109/JMEMS.2021.3115715] | Sun, Bin Scholz, Stefan Kemper, Alexander Grap, Thomas Knoch, Joachim (Corresponding author) |
| [Fachzeitschriftenartikel] Role of electron and ion irradiation in a reliable lift-off process with electron beam evaporation and a bilayer PMMA resist system In: Journal of vacuum science & technology : JVST / B, 39 (5), 052601, 2021 [DOI: 10.1116/6.0001161] | Sun, Bin Grap, Thomas Frahm, Thorben Scholz, Stefan Knoch, Joachim (Corresponding author) |
| [Fachzeitschriftenartikel] On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors In: IEEE transactions on electron devices : ED, 68 (7), 3684-3689, 2021 [DOI: 10.1109/TED.2021.3081527] | Sun, Bin (Corresponding author) Richstein, Benjamin Liebisch, Patrick Frahm, Thorben Scholz, Stefan Trommer, Jens Mikolajick, Thomas Knoch, Joachim (Corresponding author) |
| [Fachzeitschriftenartikel] Turning Low-Nanoscale Intrinsic Silicon Highly Electron-Conductive by SiO2 Coating In: ACS applied materials & interfaces, 13 (17), 20479-20488, 2021 [DOI: 10.1021/acsami.0c22360] | König, Dirk (Corresponding author) Frentzen, Michael Wilck, Noel Berghoff, Birger Veit Pis, Igor Nappini, Silvia Bondino, Federica Müller, Merlin Gonzalez, Sara Di Santo, Giovanni Petaccia, Luca Mayer, Joachim Smith, Sean Knoch, Joachim |
| [Fachzeitschriftenartikel] Epitaxial GeSn/Ge Vertical Nanowires for p-Type Field-Effect Transistors with Enhanced Performance In: ACS applied nano materials, 4 (1), 94-101, 2021 [DOI: 10.1021/acsanm.0c02368] | Liu, Mingshan Yang, Dong Shkurmanov, Alexander Bae, Jin Hee Schlykow, Viktoria Hartmann, Jean-Michel Ikonic, Zoran Baerwolf, Florian Costina, Ioan Mai, Andreas Knoch, Joachim Grützmacher, Detlev Buca, Dan Zhao, Qing-Tai (Corresponding author) |
| [Buchbeitrag, Beitrag zu einem Tagungsband] Vertical Heterojunction Ge0.92 Sn0.08 /Ge GAA Nanowire pMOSFETs : Low SS of 67 mV/dec, Small DIBL of 24 mV/V and Highest Gm,ext of 870 μS/μm In: 2020 IEEE Symposium on VLSI Technology : 16-19 June 2020, Honolulu, Hawaii, USA : proceedings / 2020 VLSI Technology Symposium; IEEE, 9265090, 2 Seiten, 2020 [DOI: 10.1109/VLSITechnology18217.2020.9265090] | Liu, Mingshan (Corresponding author) Schlykow, Viktoria Hartmann, Jean-Michel Knoch, Joachim Grützmacher, Detlev Buca, Dan Zhao, Qing-Tai |
| [Buch] Nanoelectronics : device physics, fabrication, characterisation In: De Gruyter Graduate, 2020 [DOI: 10.1515/9783110575507] | Knoch, Joachim |
| [Fachzeitschriftenartikel] Dissolution of donor-vacancy clusters in heavily doped n-type germanium In: New journal of physics, 22 (12), 123036, 2020 [DOI: 10.1088/1367-2630/abc466] | Prucnal, Slawomir (Corresponding author) Liedke, Maciej O. Wang, Xiaoshuang Butterling, Maik Posselt, Matthias Knoch, Joachim Windgassen, Horst Hirschmann, Eric Berencén, Yonder Rebohle, Lars Wang, Mao Napoltani, Enrico Frigerio, Jacopo Ballabio, Andrea Isella, Giovani Hübner, René Wagner, Andreas Bracht, Hartmut Helm, Manfred Zhou, Shengqiang |
| [Fachzeitschriftenartikel] Guest Editorial In: IEEE journal of the Electron Devices Society, 8, 738-739, 2020 [DOI: 10.1109/JEDS.2020.3009974] | Knoch, Joachim Lemme, Max C. Beck, Romuald B. Lukasiak, Lidia |
| [Fachzeitschriftenartikel] Diameter Scaling of Vertical Ge Gate- All-Around Nanowire pMOSFETs In: IEEE transactions on electron devices, 67 (7), 2988-2994, 2020 [DOI: 10.1109/TED.2020.2996183] | Liu, Mingshan (Corresponding author) Lentz, Florian Trellenkamp, Stefan Hartmann, Jean-Michel Knoch, Joachim Grützmacher, Detlev Buca, Dan Zhao, Qing-Tai |
| [Fachzeitschriftenartikel] Vertical Ge Gate-All-Around Nanowire pMOSFETs With a Diameter Down to 20 nm In: IEEE electron device letters, 41 (4), 533-536, 2020 [DOI: 10.1109/LED.2020.2971034] | Liu, Mingshan Scholz, Stefan Hardtdegen, Alexander Bae, Jin Hee Hartmann, Jean-Michel Knoch, Joachim (Corresponding author) Grützmacher, Detlev Buca, Dan Zhao, Qing-Tai |
| [Buchbeitrag, Fachzeitschriftenartikel] Vertical heterojunction Ge0.92Sn0.08/Ge gate-all-around nanowire pMOSFETs with NiGeSn contact In: Solid state electronics : SSE, 168, 107716, 2019 [DOI: 10.1016/j.sse.2019.107716] | Liu, Mingshan (Corresponding author) Mertens, Konstantin von den Driesch, Nils Schlykow, Viktoria Grap, Thomas Lentz, Florian Trellenkamp, Stefan Hartmann, Jean-Michel Knoch, Joachim Buca, Dan Zhao, Qing-Tai |
| [Buchbeitrag, Beitrag zu einem Tagungsband] Vertical Heterojunction Ge0.92Sn0.08/Ge Gate-All-Around Nanowire pMOSFETs In: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) / publisher: IEEE, 4 Seiten, 2019 [DOI: 10.1109/EUROSOI-ULIS45800.2019.9041910] | Liu, Mingshan (Corresponding author) Mertens, Konstantin von den Driesch, Nils Grap, Thomas Trellenkamp, Stefan Hartmann, Jean-Michel Knoch, Joachim Buca, Dan Zhao, Qing- Tai |
| [Buchbeitrag, Beitrag zu einem Tagungsband] First Demonstration of Vertical Ge0.92Sn0.08/Ge and Ge GAA Nanowire nMOSFETs with Low SS of 66 mV/dec and Small DIBL of 35 mV/V In: 2019 International Electron Devices Meeting : technical digest / publisher: IEEE, 29.6.1-29.6.4, 2019 [DOI: 10.1109/IEDM19573.2019.8993571] | Liu, Mingshan (Corresponding author) Scholz, Stefan Mertens, Konstantin Bae, Jin Hee Hartmann, Jean-Michel Knoch, Joachim Buca, Dan Zhao, Qing-Tai |
| [Fachzeitschriftenartikel] Editorial In: IEEE journal of the Electron Devices Society : J-EDS, 7 (1), 1161-1162, 2019 [DOI: 10.1109/JEDS.2019.2954646] | Lemme, Max C. Knoch, Joachim |
| [Fachzeitschriftenartikel] Electronic Structure Shift of Deeply Nanoscale Silicon by SiO 2 versus Si 3 N 4 Embedding as an Alternative to Impurity Doping In: Physical review applied, 12 (5), 054050, 2019 [DOI: 10.1103/PhysRevApplied.12.054050] | König, Dirk Wilck, Noel Hiller, Daniel Berghoff, Birger Veit Meledin, Alexander Di Santo, Giovanni Petaccia, Luca Mayer, Joachim Smith, Sean Knoch, Joachim |
| [Buchbeitrag, Fachzeitschriftenartikel] Spin Qubits Confined to a Silicon Nano-Ridge In: Applied Sciences, 9 (18), 3823, 2019 [DOI: 10.3390/app9183823] | Klos, Jan Sun, Bin Beyer, Jacob Clemens Lucas Kindel, Sebastian David Hellmich, Lena Knoch, Joachim Schreiber, Lars R. (Corresponding author) |
| [Fachzeitschriftenartikel] Nanoscale n ++ -p junction formation in GeOI probed by tip-enhanced Raman spectroscopy and conductive atomic force microscopy In: Journal of applied physics, 125 (24), 245703, 2019 [DOI: 10.1063/1.5080289] | Prucnal, Slawomir (Corresponding author) Berencén, Yonder Wang, Mao Georgiev, Yordan M. Erbe, Artur Khan, Muhammad B. Boettger, Roman Hübner, René Schönherr, Tommy Kalbacova, Jana Vines, Lasse Facsko, Stefan Engler, Martin Zahn, Dietrich R. T. Knoch, Joachim Helm, Manfred Skorupa, Wolfgang Zhou, Shengqiang |
| [Fachzeitschriftenartikel] Role of elemental intermixing at the In2S3/CIGSe heterojunction deposited using reactive RF magnetron sputtering In: Solar energy materials & solar cells, 195, 367-375, 2019 [DOI: 10.1016/j.solmat.2019.03.026] | Soni, Purvesh (Corresponding author) Raghuwanshi, Mohit Wuerz, Roland Berghoff, Birger Veit Knoch, Joachim Raabe, Dierk Cojocaru-Miredin, Oana-Eugenia |
| [Fachzeitschriftenartikel] Sputtering as a viable route for In2S3 buffer layer deposition in high efficiency Cu(In,Ga)Se2 solar cells In: Energy Science & Engineering, 7 (2), 478-487, 2019 [DOI: 10.1002/ese3.295] | Soni, Purvesh (Corresponding author) Raghuwanshi, Mohit Wuerz, Roland Berghoff, Birger Veit Knoch, Joachim Raabe, Dierk Cojocaru-Miredin, Oana-Eugenia |
| [Fachzeitschriftenartikel] Record-high solar-to-hydrogen conversion efficiency based on a monolithic all-silicon triple-junction IBC solar cell In: Solar energy materials & solar cells, 191, 422-426, 2018 [DOI: 10.1016/j.solmat.2018.11.004] | Nordmann, Sven Berghoff, Birger Veit (Corresponding author) Hessel, Andreas Zielinsk, B. John, J. Starschich, Sergej Knoch, Joachim |
| [Fachzeitschriftenartikel] High-Q inverted silica microtoroid resonators monolithically integrated into a silicon photonics platform In: Optics Express, 26 (21), 27418-27440, 2018 [DOI: 10.1364/OE.26.027418] | Richter, Jens Nezhad, Maziar Pourabdollah Hadam, Birgit Taubner, Thomas Knoch, Joachim Merget, Florian Moscoso Martir, Alvaro Witzens, Jeremy (Corresponding author) |
| [Fachzeitschriftenartikel] Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating In: Beilstein journal of nanotechnology, 9, 2255-2264, 2018 [DOI: 10.3762/bjnano.9.210] | König, Dirk (Corresponding author) Hiller, Daniel Wilck, Noel Berghoff, Birger Veit Müller, Merlin Thakur, Sangeeta Di Santo, Giovanni Petaccia, Luca Mayer, Joachim Smith, Sean Knoch, Joachim |
| [Fachzeitschriftenartikel] Alternatives for Doping in Nanoscale Field‐Effect Transistors In: Physica status solidi / A, 215 (7), 1-16, 2018 [DOI: 10.1002/pssa.201700969] | Riederer, Felix Grap, Thomas Fischer, Sergej Mueller, Marcel R. Yamaoka, Daichi Sun, Bin Gupta, Charu Kallis, Klaus T. Knoch, Joachim (Corresponding author) |
| [Fachzeitschriftenartikel] Electrostatic Doping of 2D-Materials : From Single Devices Toward Circuitry Exploration In: Quantum matter, 6 (1), 45-49, 2017 [DOI: 10.1166/qm.2017.1396] | Kallis, K. T. Müller, M. R. Knoch, Joachim Gumprich, A. Merten, D. |
| [Buchbeitrag, Beitrag zu einem Tagungsband] Buried multi-gate InAs-nanowire FETs In: 2017 47th European Solid-State Device Research Conference (ESSDERC) : 11-14 Sept. 2017 / [organizers: IMEC, KU Leuven MICAS ; technical co-sponsorship: IEEE], 82-85, 2017 [DOI: 10.1109/ESSDERC.2017.8066597] | Grap, Thomas (Corresponding author) Riederer, F. Gupta, C. Knoch, Joachim |
| [Buchbeitrag, Beitrag zu einem Tagungsband] A novel approach for scalable sensor arrays using cantilever field-effect transistors In: 2017 47th European Solid-State Device Research Conference (ESSDERC) : 11-14 Sept. 2017 / [organizers: IMEC, KU Leuven MICAS ; technical co-sponsorship: IEEE], 272-275, 2017 [DOI: 10.1109/ESSDERC.2017.8066644] | Hessel, Andreas (Corresponding author) Scholz, Stefan Pelger, Alexander Pfander, Albert Knoch, Joachim (Corresponding author) |
| [Buchbeitrag, Fachzeitschriftenartikel] Investigations on Field-Effect Transistors Based on Two-Dimensional Materials In: Annalen der Physik, 529 (11), 1700087, 2017 [DOI: 10.1002/andp.201700087] | Finge, T. Riederer, F. Müller, M. R. Grap, T. Kallis, K. Knoch, Joachim (Corresponding author) |
| [Buchbeitrag, Beitrag zu einem Tagungsband] The engineering challenges in quantum computing In: Proceedings of the 2017 Design, Automation & Test in Europe (DATE) : 27-31 March 2017, Swisstech, Lausanne, Switzerland / sponsors: European Design and Automation Association [und 5 weitere] ; technical co-sponsors: IEEE Computer Society Test Technology Technical Council (TTTC), IEEE Solid-State Circuits Society (SSCS), International Federation for Information Processing (IFIP), 836-845, 2017 [DOI: 10.23919/DATE.2017.7927104] | Almudever, C. G. (Corresponding author) Lao, L. Fu, X. Khammassi, N. Ashraf, I. Iorga, D. Varsamopoulos, S. Eichler, C. Wallraff, A. Geck, L. Kruth, A. Knoch, Joachim Bluhm, Jörg Bertels, K. |
| [Fachzeitschriftenartikel] Simultaneous measurement of doping concentration and carrier lifetime in silicon using terahertz time-domain transmission In: Applied physics letters, 110 (7), 072103, 2017 [DOI: 10.1063/1.4976314] | Lenz, Markus Matheisen, C. Nagel, M. Knoch, Joachim |
| [Fachzeitschriftenartikel] Large-area MoS2 deposition via MOVPE In: Journal of crystal growth, 464, 100-104, 2016 [DOI: 10.1016/j.jcrysgro.2016.11.020] | Marx, Matthias (Corresponding author) Nordmann, Sven Knoch, Joachim Franzen, Christopher Nikolaus Stampfer, Christoph Andrzejewski, D. Kümmell, T. Bacher, G. Heuken, Michael Kalisch, Holger Vescan, Andrei |
| [Buchbeitrag] Transition Metal Dichalcogenide Schottky Barrier Transistors In: 2D materials for nanoelectronics / edited by Michel Houssa (IMEC, Leuven, Belgium), Athanasios Dimoulas (NCSR-Demokritos, Athens, Greece), Alessandro Molle (CNR IMM, Agrate Brianza, Italy), 207-240, 2016 [DOI: 10.1201/b19623-11] | Appenzeller, Joerg Zhang, Feng Das, Saptarshi Knoch, Joachim |
| [Fachzeitschriftenartikel] Gate-Controlled WSe2 Transistors Using a Buried Triple-Gate Structure In: Nanoscale research letters :NRL, 11 (1), 512, 2016 [DOI: 10.1186/s11671-016-1728-7] | Müller, M. R. Salazar, R. Fathipour, S. Xu, H. Kallis, K. Künzelmann, U. Seabaugh, A. Appenzeller, J. Knoch, Joachim (Corresponding author) |
| [Buchbeitrag, Fachzeitschriftenartikel] Nanowire Tunneling Field-Effect Transistors In: Semiconductors and semimetals, 94, 273-295, 2016 [DOI: 10.1016/bs.semsem.2015.09.005] | Knoch, Joachim (Corresponding author) |
| [Fachzeitschriftenartikel] A monolithic all-silicon multi-junction solar device for direct water splitting In: Renewable energy, 94, 90-95, 2016 [DOI: 10.1016/j.renene.2016.03.050] | Nordmann, Sven (Corresponding author) Berghoff, Birger Veit Hessel, Andreas Wilck, Noel Osullivan, B. Debucquoy, M. John, J. Starschich, Sergej Knoch, Joachim |
| [Fachzeitschriftenartikel] Dopant-free complementary metal oxide silicon field effect transistors In: Physica status solidi / A, 213 (6), 1494-1499, 2016 [DOI: 10.1002/pssa.201532998] | Fischer, Sergej (Corresponding author) Kremer, Hauke Ingolf Berghoff, Birger Veit Maß, Tobias Taubner, Thomas Knoch, Joachim |
| [Buchbeitrag, Beitrag zu einem Tagungsband] Investigation of dopant segregation induced surface-fields using THz pulse transmission In: 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC 2015) : New Orleans, Louisiana, USA, 14 - 19 June 2015. - 5, 3657-3660, 2015 [DOI: 10.1109/PVSC.2015.7356422] | Lenz, Markus Kianfar, Amir Ehsan Nordmann, Sven Sawallich, Simon Nagel, Michael Berghoff, Birger Veit Knoch, Joachim |
| [Buchbeitrag] Nanowire FET Simulations Based on the Nonequilibrium Green’s Function Formalism In: Encyclopedia of nanotechnology / Editors: Bharat Bhushan, 100943-1, 10 Seiten, 2015 [DOI: 10.1007/978-94-007-6178-0_100943-1] | Indlekofer, Klaus Michael (Corresponding author) Knoch, Joachim |
| [Fachzeitschriftenartikel] Visibility of two-dimensional layered materials on various substrates In: Journal of applied physics, 118 (14), 145305, 2015 [DOI: 10.1063/1.4930574] | Müller, M. R. (Corresponding author) Gumprich, A. Ecik, E. Kallis, Klaus T. Winkler, F. Kardynal, B. Petrov, I. Kunze, U. Knoch, Joachim (Corresponding author) |
| [Buchbeitrag, Beitrag zu einem Tagungsband] Towards a multiscale modeling framework for metal-CNT interfaces In: 2014 International Workshop on Computational Electronics (IWCE) : [Proceedings], 2014 [DOI: 10.1109/IWCE.2014.6865837] | Claus, M. (Corresponding author) Fediai, A. Mothes, S. Knoch, Joachim Ryndyk, D. Blawid, S. Cuniberti, G. Schroter, M. |
| [Fachzeitschriftenartikel] Electrostatic Doping : Controlling the Properties of Carbon-Based FETs With Gates In: IEEE nanotechnology magazine, 13 (6), 1044-1052, 2014 [DOI: 10.1109/TNANO.2014.2323436] | Knoch, Joachim (Corresponding author) Müller, M. R. (Corresponding author) |
| [Buchbeitrag, Fachzeitschriftenartikel] Buried triple-gate structures for advanced field-effect transistor devices In: Microelectronic engineering, 119, 95-99, 2014 [DOI: 10.1016/j.mee.2014.02.001] | Müller, M. R. (Corresponding author) Gumprich, A. Schütte, F. Kallis, K. Künzelmann, U. Engels, S. Stampfer, Christoph Wilck, Noel Knoch, Joachim |
| [Fachzeitschriftenartikel] Contacting Moderately Doped Phosphorous Emitters of Silicon Solar Cells With Dopant Segregation During Nickel Silicidation In: IEEE journal of photovoltaics, 4 (4), 1025-1031, 2014 [DOI: 10.1109/JPHOTOV.2014.2313982] | Lenz, Markus (Corresponding author) Windgassen, Horst (Corresponding author) Pletzer, Tobias M. (Corresponding author) Knoch, Joachim (Corresponding author) |
| [Buchbeitrag, Beitrag zu einem Tagungsband] Gate-Controlled Doping in Carbon-Based FETs In: 2013 IFIP/IEEE 21st International Conference on Very Large Scale Integration (VLSI-SoC) : 7-9 Oct. 2013 ; Istanbul, 162-167, 2013 [DOI: 10.1109/VLSI-SoC.2013.6673269] | Knoch, Joachim (Author) Grap, Thomas Müller, Marcel |
| [Fachzeitschriftenartikel] Influence of cracks on the local current-voltage parameters of silicon solar cells In: Progress in photovoltaics, 9 S., 2013 [DOI: 10.1002/pip.2443] | Pletzer, Tobias Markus (Corresponding author) van Mölken, Justus Immanuel Rißland, S. Breitenstein, Otwin Knoch, Joachim |
| [Fachzeitschriftenartikel] Optimizing the identification of mono- and bilayer graphene on multilayer substrates In: Applied optics, 51 (3), 385, 2012 [DOI: 10.1364/AO.51.000385] | Kontis, Christopher Mueller, Marcel R. Kuechenmeister, Christian Kallis, Klaus T. Knoch, Joachim (Corresponding author) |
| [Patent] Micromechanical pressure sensor and method for producing same, 2012 | Knoch, Joachim Kallis, Klaus |
| [Patent] Metal-oxide-semiconductor device including a multiple-layer energy filter, 2012 | Bjoerk, Mikael T. Karg, Siegfried F. Knoch, Joachim Riel, Heike E. Riess, Walter H. Schmid, Heinz |
| [Buchbeitrag, Beitrag zu einem Tagungsband] Characterization of three-dimensional structures in silicon solar cells by spatially-resolved illuminated lock-in thermography In: 2012 38th IEEE Photovoltaic Specialists Conference (PVSC) : Austin, TX, USA, 3-8 June 2012, 001849-001854, 2012 [DOI: 10.1109/PVSC.2012.6317954] | Pletzer, Tobias Markus Lenz, Markus Windgassen, Horst Knoch, Joachim |
| [Fachzeitschriftenartikel] Properties of metal-graphene contacts In: IEEE nanotechnology magazine, 11 (3), 513-519, 2012 [DOI: 10.1109/TNANO.2011.2178611] | Knoch, Joachim Zhihong Chen Appenzeller, J. |
| [Patent] Semiconducgor devices with screening coating to inhibit dopant deactivation, 2011 | Björk, Mikael Knoch, Joachim Riel, Heike Riess, Walter Schmid, Heinz |
| [Patent] Tunnel Field-Effect Devices, 2011 | Bjoerk, Mikael T. Karg, Siegfried F. Knoch, Joachim Reil, Heike E. Riess, Walter H. Solomon, Paul M. |
| [Patent] Impact Ionization Field-Effect Transistor, 2011 | Björk, Mikael Hayden, O. Lörtscher, E. Riel, Heike Riess, Walter Schmid, Heinz Knoch, Joachim |
| [Fachzeitschriftenartikel] Radio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOI In: IEEE electron device letters, 31 (6), 537 - 539, 2010 [DOI: 10.1109/LED.2010.2045220] | Urban, Christoph Emam, Mostafa Sandow, Christian Knoch, Joachim Zhao, Qing-Tai Raskin, Jean-Pierre Mantl, Siegfried |
| [Fachzeitschriftenartikel] Modeling of High-Performance p-Type III-V Heterojunction Tunnel FETs In: IEEE electron device letters, 31 (4), 305 - 307, 2010 [DOI: 10.1109/LED.2010.2041180] | Knoch, Joachim Appenzeller, J. |
| [Patent] Nanoelectronic Device, 2010 | Bjoerk, Mikael T. Knoch, Joachim Riel, Heike E. Riess, Walter Heinrich Schmid, Heinz |
| [Buchbeitrag, Beitrag zu einem Tagungsband] Performance enhancement of uniaxially-tensile strained Si NW-nFETs fabricated by lateral strain relaxation of SSOI In: 2009 10th International Conference on Ultimate Integration of Silicon : [Proceedings], 109-112, 2009 [DOI: 10.1109/ULIS.2009.4897550] | Feste, S. F. Knoch, Joachim Habicht, S. Buca, D. Zhao, Q. T. Mantl, S. |
| [Buchbeitrag, Beitrag zu einem Tagungsband] Interface engineering for the suppression of ambipolar behavior in Schottky-barrier MOSFETs In: 2009 10th International Conference on Ultimate Integration of Silicon : [Proceedings], 69-72, 2009 [DOI: 10.1109/ULIS.2009.4897541] | Ghoneim, H. Knoch, Joachim Riel, H. Webb, D. Bjork, M. T. Karg, S. Lortscher, E. Schmid, H. Riess, W. |
| [Fachzeitschriftenartikel] Impact of variability on the performance of SOI Schottky barrier MOSFETs In: Solid state electronics, 53 (4), 418 - 423, 2009 [DOI: 10.1016/j.sse.2008.09.019] | Feste, S. F. Zhang, M. Knoch, Joachim Mantl, S. |
| [Fachzeitschriftenartikel] Suppression of ambipolar behavior in metallic source/drain metal-oxide-semiconductor field-effect transistors In: Applied physics letters, 95 (21), 213504, 2009 [DOI: 10.1063/1.3266526] | Ghoneim, H. Knoch, Joachim Riel, H. Webb, D. Björk, M. T. Karg, S. Lörtscher, E. Schmid, H. Riess, W. |
| [Buchbeitrag, Beitrag zu einem Tagungsband] Optimizing tunnel FET performance - Impact of device structure, transistor dimensions and choice of material In: 2009 International Symposium on VLSI Technology, Systems, and Applications : [Proceedings], 45-46, 2009 [DOI: 10.1109/VTSA.2009.5159285] | Knoch, Joachim |
| [Fachzeitschriftenartikel] Silicon nanowire FETs with uniaxial tensile strain In: Solid state electronics, 53 (12), 1257 - 1262, 2009 [DOI: 10.1016/j.sse.2009.10.013] | Feste, S. F. Knoch, Joachim Habicht, S. Buca, D. Zhao, Q.-T. Mantl, S. |
| [Fachzeitschriftenartikel] Doping Limits of Grown in situ Doped Silicon Nanowires Using Phosphine In: Nano letters, 9 (1), 173 - 177, 2009 [DOI: 10.1021/nl802739v] | Schmid, Heinz Björk, Mikael T. Knoch, Joachim Karg, Siegfried Riel, Heike Riess, Walter |
| [Fachzeitschriftenartikel] Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors In: Solid state electronics, 53 (10), 1126 - 1129, 2009 [DOI: 10.1016/j.sse.2009.05.009] | Sandow, C. Knoch, Joachim Urban, C. Zhao, Q.-T. Mantl, S. |
| [Fachzeitschriftenartikel] Donor deactivation in silicon nanostructures In: Nature nanotechnology, 4 (2), 103-107, 2009 [DOI: 10.1038/nnano.2008.400] | Björk, Mikael T. Schmid, Heinz Knoch, Joachim Riel, Heike Riess, Walter |
| [Patent] Metal-oxide-semiconductor device including an energy filter, 2009 | Bjoerk, Mikael T. Karg, Siegfried F. Knoch, Joachim Riel, Heike E. Riess, Walter H. Schmid, Heinz |
| [Fachzeitschriftenartikel] Many-body approach to the terahertz response of Wigner molecules in gated nanowire structures In: Physical Review B, 77 (12), 125436, 2008 [DOI: 10.1103/PhysRevB.77.125436] | Indlekofer, K. M. Németh, R. Knoch, Joachim |
| [Buchbeitrag, Beitrag zu einem Tagungsband] Improving the performance of band-to-band tunneling transistors by tuning the gate oxide and the dopant concentration In: 2008 Device Research Conference : [Proceedings], 2008 [DOI: 10.1109/DRC.2008.4800743] | Sandow, C. Knoch, Joachim Urban, C. Mantl, S. |
| [Buchbeitrag, Beitrag zu einem Tagungsband] One-Dimensional Nanoelectronic Devices - Towards the Quantum Capacitance Limit In: 2008 Device Research Conference : [Proceedings], 173-176, 2008 [DOI: 10.1109/DRC.2008.4800790] | Knoch, Joachim Bjork, M. T. Riel, H. Schmid, H. Riess, W. |
| [Fachzeitschriftenartikel] Fabrication of uniaxially strained silicon nanowires In: Thin solid films, 517 (1), 320 - 322, 2008 [DOI: 10.1016/j.tsf.2008.08.141] | Feste, S. F. Knoch, Joachim Buca, D. Mantl, S. |
| [Fachzeitschriftenartikel] Threshold Voltage Variation in SOI Schottky-Barrier MOSFETs In: IEEE transactions on electron devices, 55 (3), 858 - 865, 2008 [DOI: 10.1109/TED.2007.915054] | Zhang, Min Knoch, Joachim Zhang, Shi-Li Feste, Sebastian Schröter, Michael Mantl, Siegfried |
| [Fachzeitschriftenartikel] Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings In: Journal of applied physics, 104 (4), 044908, 2008 [DOI: 10.1063/1.2968462] | Lanzerath, F. Buca, D. Trinkaus, H. Goryll, M. Mantl, S. Knoch, Joachim Breuer, U. Skorupa, W. Ghyselen, B. |
| [Fachzeitschriftenartikel] Outperforming the Conventional Scaling Rules in the Quantum-Capacitance Limit In: IEEE electron device letters, 29 (4), 372 - 374, 2008 [DOI: 10.1109/LED.2008.917816] | Knoch, Joachim Riess, W. Appenzeller, J. |
| [Fachzeitschriftenartikel] Patterned epitaxial vapor-liquid-solid growth of silicon nanowires on Si(111) using silane In: Journal of applied physics, 103 (2), 024304, 2008 [DOI: 10.1063/1.2832760] | Schmid, Heinz Björk, M. T. Knoch, Joachim Riel, H. Riess, W. Rice, P. Topuria, T. |
| [Fachzeitschriftenartikel] Tunneling phenomena in carbon nanotube field-effect transistors In: Physica status solidi / A, 205 (4), 679 - 694, 2008 [DOI: 10.1002/pssa.200723528] | Knoch, Joachim Appenzeller, Joerg |
| [Fachzeitschriftenartikel] Silicon nanowire tunneling field-effect transistors In: Applied physics letters, 92 (19), 193504, 2008 [DOI: 10.1063/1.2928227] | Björk, M. T. Knoch, Joachim Schmid, Heinz Riel, H. Riess, W. |
| [Fachzeitschriftenartikel] Toward Nanowire Electronics In: IEEE transactions on electron devices, 55 (11), 2827 - 2845, 2008 [DOI: 10.1109/TED.2008.2008011] | Appenzeller, Joerg Knoch, Joachim Bjork, Mikael T. Riel, Heike Schmid, Heinz Riess, Walter |
| [Buchbeitrag, Beitrag zu einem Tagungsband] Semiconductor Nanostructures and Devices In: Nanoscaled semiconductor-on-insulator structures and devices : [proceedings of the NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices, Big Yalta, Ukraine, 15 - 19 October 2006] / ed. by S. Hall ..., 2007 [DOI: 10.1007/978-1-4020-6380-0_10] | Knoch, Joachim Lüth, Hans |
| [Fachzeitschriftenartikel] Understanding Coulomb Effects in Nanoscale Schottky-Barrier-FETs In: IEEE transactions on electron devices, 54 (6), 1502 - 1509, 2007 [DOI: 10.1109/TED.2007.895235] | Indlekofer, K. M. Knoch, Joachim Appenzeller, J. |
| [Fachzeitschriftenartikel] Dopant segregation in SOI Schottky-barrier MOSFETs In: Microelectronic engineering, 84 (11), 2563 - 2571, 2007 [DOI: 10.1016/j.mee.2007.05.047] | Knoch, Joachim Zhang, M. Feste, S. Mantl, S. |
| [Fachzeitschriftenartikel] Improved Carrier Injection in Ultrathin-Body SOI Schottky-Barrier MOSFETs In: IEEE electron device letters, 28 (3), 223 - 225, 2007 [DOI: 10.1109/LED.2007.891258] | Zhang, M. Knoch, Joachim Appenzeller, Joerg Mantl, S. |
| [Fachzeitschriftenartikel] 1/f Noise in Carbon Nanotube Devices—On the Impact of Contacts and Device Geometry In: IEEE transactions on nanotechnology, 6 (3), 368 - 373, 2007 [DOI: 10.1109/TNANO.2007.892052] | Appenzeller, Joerg Lin, Yu-Ming Knoch, Joachim Chen, Zhihong Avouris, Phaedon |
| [Fachzeitschriftenartikel] Physics of ultrathin-body silicon-on-insulator Schottky-barrier field-effect transistors In: Applied physics / A, 87 (3), 351-357, 2007 [DOI: 10.1007/s00339-007-3868-1] | Knoch, Joachim Zhang, M. Appenzeller, J. Mantl, S. |
| [Fachzeitschriftenartikel] Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices In: Solid state electronics, 51 (4), 572 - 578, 2007 [DOI: 10.1016/j.sse.2007.02.001] | Knoch, Joachim Mantl, S. Appenzeller, J. |
| [Fachzeitschriftenartikel] Quantum confinement corrections to the capacitance of gated one-dimensional nanostructures In: Physical Review B, 74 (11), 113310, 2006 [DOI: 10.1103/PhysRevB.74.113310] | Indlekofer, K. M. Knoch, Joachim Appenzeller, J. |
| [Buchbeitrag, Beitrag zu einem Tagungsband] Tuning of Schottky barrier heights by silicidation induced impurity segregation In: 2006 International Workshop on Junction Technology : [Proceedings], 147-152, 2006 [DOI: 10.1109/IWJT.2006.220881] | Zhao, Q. T. Zhang, M. Knoch, Joachim Mantl, S. |
| [Buchbeitrag] Carbon Nanotube Field-effect Transistors-The Importance of Being Small In: AmIware : hardware technology drivers of ambient intelligence / edited by Satyen Mukherjee ... [et al.], 2006 [DOI: 10.1007/1-4020-4198-5_18] | Knoch, Joachim Appenzeller, Joerg |
| [Fachzeitschriftenartikel] Impact of dopant segregation on fully depleted Schottky-barrier SOI-MOSFETs In: Solid state electronics, 50 (4), 594 - 600, 2006 [DOI: 10.1016/j.sse.2006.03.016] | Zhang, M. Knoch, Joachim Zhao, Q. T. Breuer, U. Mantl, S. |
| [Buchbeitrag, Beitrag zu einem Tagungsband] Dual-gate silicon nanowire transistors with nickel silicide contacts In: 2006 International Electron Devices Meeting : [Proceedings], 2006 [DOI: 10.1109/IEDM.2006.346842] | Appenzeller, J. Knoch, Joachim Tutuc, E. Reuter, M. Guha, S. |
| [Fachzeitschriftenartikel] On the performance of single-gated ultrathin-body SOI Schottky-barrier MOSFETs In: IEEE transactions on electron devices, 53 (7), 1669 - 1674, 2006 [DOI: 10.1109/TED.2006.877262] | Knoch, Joachim Zhang, Min Mantl, S. Appenzeller, J. |
| [Fachzeitschriftenartikel] Low-Frequency Current Fluctuations in Individual Semiconducting Single-Wall Carbon Nanotubes In: Nano letters, 6 (5), 930 - 936, 2006 [DOI: 10.1021/nl052528d] | Lin, Yu-Ming Appenzeller, Joerg Knoch, Joachim Chen, Zhihong Avouris, Phaedon |
| [Fachzeitschriftenartikel] Quantum kinetic description of Coulomb effects in one-dimensional nanoscale transistors In: Physical Review B, 72 (12), 125308, 2005 [DOI: 10.1103/PhysRevB.72.125308] | Indlekofer, K. M. Knoch, Joachim Appenzeller, J. |
| [Fachzeitschriftenartikel] Low temperature measurements of Schottky-barrier SOI-MOSFETs with dopant segregation In: Electronics letters, 41 (19), 1085, 2005 [DOI: 10.1049/el:20052665] | Zhang, M. Knoch, Joachim Zhao, Q. T. Fox, A. Lenk, St. Mantl, S. |
| [Fachzeitschriftenartikel] Comparison of transport properties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts In: Solid state electronics, 49 (1), 73 - 76, 2005 [DOI: 10.1016/j.sse.2004.07.002] | Knoch, Joachim Mantl, S. Appenzeller, J. |
| [Fachzeitschriftenartikel] Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation In: Applied physics letters, 87 (26), 263505, 2005 [DOI: 10.1063/1.2150581] | Knoch, Joachim Zhang, M. Zhao, Q. T. Lenk, St. Mantl, S. Appenzeller, J. |
| [Buchbeitrag, Beitrag zu einem Tagungsband] A novel concept for field-effect transistors - the tunneling carbon nanotube FET In: 63rd Device Research Conference Digest, 2005. DRC '05. : [Proceedings], 153-156, 2005 [DOI: 10.1109/DRC.2005.1553099] | Knoch, Joachim Appenzeller, J. |
| [Buchbeitrag, Beitrag zu einem Tagungsband] Schottky barrier height modulation using dopant segregation in schottky-barrier SOI-MOSFETs In: Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005., 457-460, 2005 [DOI: 10.1109/ESSDER.2005.1546683] | Zhang, Min Knoch, Joachim Zhao, Q. T. Lenk, St. Breuer, U. Mantl, S. |
| [Fachzeitschriftenartikel] Comparing Carbon Nanotube Transistors—The Ideal Choice: A Novel Tunneling Device Design In: IEEE transactions on electron devices, 52 (12), 2568 - 2576, 2005 [DOI: 10.1109/TED.2005.859654] | Appenzeller, J. Lin, Y.-M. Knoch, Joachim Chen, Z. Avouris, P. |
| [Fachzeitschriftenartikel] High-Performance Carbon Nanotube Field-Effect Transistor With Tunable Polarities In: IEEE transactions on nanotechnology, 4 (5), 481 - 489, 2005 [DOI: 10.1109/TNANO.2005.851427] | Lin, Y.-M. Appenzeller, J. Knoch, Joachim Avouris, P. |
| [Fachzeitschriftenartikel] The Role of Metal−Nanotube Contact in the Performance of Carbon Nanotube Field-Effect Transistors In: Nano letters, 5 (7), 1497 - 1502, 2005 [DOI: 10.1021/nl0508624] | Chen, Zhihong Appenzeller, Joerg Knoch, Joachim Lin, Yu-ming Avouris, Phaedon |
| [Patent] Method of fabricating a tunneling nanotube field effect transistor, 2005 | Knoch, Joachim Appenzeller, Jörg |
| [Buchbeitrag, Beitrag zu einem Tagungsband] An extended model for carbon nanotube field-effect transistors In: Conference Digest [Late News Papers volume included]Device Research Conference, 2004. 62nd DRC. : [Proceedings], 135-136, 2004 [DOI: 10.1109/DRC.2004.1367821] | Knoch, Joachim Mantl, S. Lh, Y.-M. Chen, Z. Avouris, Ph. Appenzeller, J. |
| [Fachzeitschriftenartikel] Multimode Transport in Schottky-Barrier Carbon-Nanotube Field-Effect Transistors In: Physical review letters : PRL, 92 (22), 226802, 2004 [DOI: 10.1103/PhysRevLett.92.226802] | Appenzeller, J. Knoch, Joachim Radosavljević, M. Avouris, Ph. |
| [Fachzeitschriftenartikel] High performance of potassium n-doped carbon nanotube field-effect transistors In: Applied physics letters, 84 (18), 3693 - 3695, 2004 [DOI: 10.1063/1.1737062] | Radosavljević, M. Appenzeller, J. Avouris, Ph. Knoch, Joachim |
| [Fachzeitschriftenartikel] Tunneling Versus Thermionic Emission in One-Dimensional Semiconductors In: Physical review letters : PRL, 92 (4), 048301, 2004 [DOI: 10.1103/PhysRevLett.92.048301] | Appenzeller, J. Radosavljević, M. Knoch, Joachim Avouris, Ph. |
| [Fachzeitschriftenartikel] Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors In: Physical review letters : PRL, 93 (19), 196805, 2004 [DOI: 10.1103/PhysRevLett.93.196805] | Appenzeller, J. Lin, Y.-M. Knoch, Joachim Avouris, Ph. |
| [Buchbeitrag, Beitrag zu einem Tagungsband] Carbon nanotube field-effect transistors-an example of an ultra-thin body Schottky barrier device In: 61st Device Research Conference. Conference Digest (Cat. No.03TH8663) : [Proceedings], 167-170, 2003 [DOI: 10.1109/DRC.2003.1226919] | Appenzeller, J. Knoch, Joachim Avouris, P. |
| [Fachzeitschriftenartikel] Sub-40 nm SOI V-groove n-MOSFETs In: IEEE electron device letters, 23 (2), 100 - 102, 2002 [DOI: 10.1109/55.981319] | Appenzeller, J. Martel, R. Avouris, Ph. Knoch, Joachim Scholvin, J. del Alamo, J. A. Rice, P. Solomon, P. |
| [Buchbeitrag, Beitrag zu einem Tagungsband] Short-channel like effects in Schottky barrier carbon nanotube field-effect transistors In: Digest. International Electron Devices Meeting, : [Proceedings], 2002 [DOI: 10.1109/IEDM.2002.1175834] | Appenzeller, J. Knoch, Joachim Martel, R. Derycke, V. Wind, S. Avouris, P. |
| [Fachzeitschriftenartikel] Carbon nanotube electronics In: IEEE transactions on nanotechnology, 1 (4), 184 - 189, 2002 [DOI: 10.1109/TNANO.2002.807390] | Appenzeller, J. Knoch, Joachim Martel, R. Derycke, V. Wind, S. J. Avouris, P. |
| [Fachzeitschriftenartikel] Field-Modulated Carrier Transport in Carbon Nanotube Transistors In: Physical review letters : PRL, 89 (12), 126801, 2002 [DOI: 10.1103/PhysRevLett.89.126801] | Appenzeller, J. Knoch, Joachim Derycke, V. Martel, R. Wind, S. Avouris, Ph. |
| [Fachzeitschriftenartikel] Impact of the channel thickness on the performance of Schottky barrier metal-oxide-semiconductor field-effect transistors In: Applied physics letters, 81 (16), 3082-3084, 2002 [DOI: 10.1063/1.1513657] | Knoch, Joachim Appenzeller, Jörg |
| [Fachzeitschriftenartikel] Scheme for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors In: Applied physics letters, 77 (2), 298-300, 2000 [DOI: 10.1063/1.126956] | Appenzeller, Jörg Martel, R. Solomon, P. Chan, K. Avouris, P. Knoch, Joachim Benedict, J. Tanner, M. Thomas, S. Wang, K. L. del Alamo, J. A. |