[Contribution to a conference proceedings, Journal Article]
Improved performance of FDSOI FETs at cryogenic temperatures by optimizing ion implantation into silicide
In: Solid state electronics : SSE, 208, 108733, 2023
[DOI: 10.1016/j.sse.2023.108733]

Han, Yi (Corresponding author)
Sun, Jingxuan
Radu, Ionut
Knoch, Joachim
Grützmacher, Detlev
et al.

[Journal Article]
Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems
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[DOI: 10.1109/JEDS.2023.3297855]

Frahm, T. (Corresponding author)
Buttberg, M.
Gvozdev, G.
Müller, R. A.
Chen, S.
et al.

[Contribution to a book, Contribution to a conference proceedings]
Reaction-diffusion model for hydrogen release from PECVD silicon nitride
In: 2023 IEEE International Interconnect Technology Conference (IITC) & IEEE Materials for Advanced Metallization Conference (MAM), 3 Seiten, 2023
[DOI: 10.1109/IITC/MAM57687.2023.10154702]

Dani, Prafullkrishna (Corresponding author)
Rizzi, Leo (Corresponding author)
Franz, Jochen (Corresponding author)
Knoch, Joachim (Corresponding author)

[Journal Article]
Fabrication of ultrasmall si encapsulated in silicon dioxide and silicon nitride as alternative to impurity doping
In: Physica status solidi / A, 220 (13), 2300066, 2023
[DOI: 10.1002/pssa.202300066]

Frentzen, Michael (Corresponding author)
Michailow, Michail
Ran, Ke
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Mayer, Joachim
et al.

[Journal Article]
Analytic description of nanowires II: morphing of regular cross sections for zincblende- and diamond-structures to match arbitrary shapes. Corrigendum
In: Acta crystallographica / B, 79 (2), 195-195, 2023
[DOI: 10.1107/S2052520623000434]

König, Dirk (Corresponding author)
Smith, Sean C.

[Contribution to a book, Journal Article]
Miniaturized pH-Sensitive Field-Effect Capacitors with Ultrathin Ta2O5 Films Prepared by Atomic Layer Deposition
In: Physica status solidi / A, 219 (8), 2100660, 2022
[DOI: 10.1002/pssa.202100660]

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[Contribution to a book, Contribution to a conference proceedings]
Cryogenic Steep Slope Field-Effect Transistors
In: 2022 IEEE Silicon Nanoelectronics Workshop (SNW), 2 Seiten, 2022
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Richstein, Benjamin
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[Journal Article]
Disentangling ionic and electronic contributions to the switching dynamics of memristive Pr0.7Ca0.3MnO3/Al devices by employing a two-resistor model
In: Physical review materials, 6 (9), 095002, 2022
[DOI: 10.1103/PhysRevMaterials.6.095002]

Gutsche, Alexander (Corresponding author)
Hambsch, Sebastian
Branca, Nuno Casa
Dittmann, Regina (Corresponding author)
Scholz, Stefan
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[Journal Article]
Interface Engineering for Steep Slope Cryogenic MOSFETs
In: IEEE electron device letters, 43 (12), 2149-2152, 2022
[DOI: 10.1109/LED.2022.3217314]

Richstein, B. (Corresponding author)
Han, Y.
Zhao, Q.
Hellmich, L.
Klos, J.
et al.

[Dissertation / PhD Thesis]
Reconfigurable field-effect transistors based on wet-chemically etched silicon nanostructures, 2022
[DOI: 10.18154/RWTH-2022-08816]

Sun, Bin

[Journal Article]
Analytic description of nanowires II: morphing of regular cross sections for zincblende- and diamond-structures to match arbitrary shapes
In: Acta crystallographica / B, 78 (Part 4), 643-664, 2022
[DOI: 10.1107/S2052520622004942]

König, Dirk (Corresponding author)
Smith, Sean C.

[Journal Article]
Analytical description of nanowires III : regular cross sections for wurtzite structures
In: Acta crystallographica / B, 78 (Part 4), 665-677, 2022
[DOI: 10.1107/S2052520622004954]

König, Dirk (Corresponding author)
Smith, Sean C.

[Journal Article]
Steep Switching Si Nanowire p-FETs With Dopant Segregated Silicide Source/Drain at Cryogenic Temperature
In: IEEE electron device letters, 43 (8), 1187-1190, 2022
[DOI: 10.1109/LED.2022.3185781]

Han, Yi (Corresponding author)
Sun, Jingxuan
Richstein, Benjamin
Allibert, Frederic
Radu, Ionut
et al.

[Contribution to a book, Contribution to a conference proceedings]
NEUROTEC I: Neuro-inspired Artificial Intelligence Technologies for the Electronics of the Future
In: Proceedings of the 2022 Design, Automation & Test in Europe Conference & Exhibition (DATE 2022) : 14-23 March 2022, online, virtual platform / DATE '22 - Design, Automation and Test in Europe Conference ; editors: Cristiana Bolchini, Ingrid Verbauwhede and Ioana Vatajelu, 957-962, 2022
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Menzel, Stephan
Merchant, Farhad
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Chen, Hsin-Yu
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[Journal Article]
Characterization of fully silicided source/drain SOI UTBB nMOSFETs at cryogenic temperatures
In: Solid state electronics, 192, 108263, 2022
[DOI: 10.1016/j.sse.2022.108263]

Han, Yi (Corresponding author)
Xi, Fengben
Allibert, Frederic
Radu, Ionut
Prucnal, Slawomir
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[Journal Article]
Direct Electroplating on Indium-Tin-Oxide-Coated Textured and Polished Silicon Substrates via Transition Metal Alloyed Interlayers
In: Journal of the Electrochemical Society, 169 (5), 052503, 2022
[DOI: 10.1149/1945-7111/ac690b]

Politze, Jochen (Corresponding author)
Scholz, Stefan
Windgassen, Horst
Schmitz, Christian
Ding, Kaining
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[Journal Article]
Sub-Linear Current Voltage Characteristics of Schottky-Barrier Field-Effect Transistors
In: IEEE transactions on electron devices, 69 (5), 2243-2247, 2022
[DOI: 10.1109/TED.2022.3161245]

Knoch, Joachim (Corresponding author)
Sun, Bin

[Journal Article]
Delineating charge and capacitance transduction in system-integrated graphene-based BioFETs used as aptasensors for malaria detection
In: Biosensors and bioelectronics, 208, 114219, 2022
[DOI: 10.1016/j.bios.2022.114219]

Figueroa-Miranda, Gabriela
Liang, Yuanying
Suranglikar, Mohit
Stadler, Matthias
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[Contribution to a book, Contribution to a conference proceedings]
Impact of the Backgate on the Performance of SOI UTBB nMOSFETs at Cryogenic Temperatures
In: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) : 1-3 Sept. 2021, 2021
[DOI: 10.1109/EuroSOI-ULIS53016.2021.9560182]

Han, Yi (Corresponding author)
Xi, Fengben
Allibert, Frederic
Radu, Ionut
Prucnal, Slawomir
et al.

[Abstract]
Employing CMOS technology on silicon for a scalable electron-spin qubit architecture
In: APS March Meeting, 2021

Klos, Jan
Sun, Bin
Kindel, Sebastian David
Hellmich, Lena
Knoch, Joachim
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[Contribution to a book, Journal Article]
Silicon Nitride Interface Engineering for Fermi Level Depinning and Realization of Dopant-Free MOSFETs
In: Micro, 1 (2), 228-241, 2021
[DOI: 10.3390/micro1020017]

Richstein, Benjamin (Corresponding author)
Hellmich, Lena
Knoch, Joachim

[Journal Article]
Modeling and Prediction of Hydrogen-Assisted Morphological Evolution in Silicon Utilizing a Level-Set Approach
In: Journal of microelectromechanical systems : JMEMS, 30 (6), 950-957, 2021
[DOI: 10.1109/JMEMS.2021.3115715]

Sun, Bin
Scholz, Stefan
Kemper, Alexander
Grap, Thomas
Knoch, Joachim (Corresponding author)

[Journal Article]
Analytical description of nanowires. I. Regular cross sections for zincblende and diamond structures. Corrigendum
In: Acta crystallographica / B, 77 (5), 861, 2021
[DOI: 10.1107/S2052520621008015]

König, Dirk (Corresponding author)
Smith, Sean C.

[Journal Article]
Role of electron and ion irradiation in a reliable lift-off process with electron beam evaporation and a bilayer PMMA resist system
In: Journal of vacuum science & technology : JVST / B, 39 (5), 052601, 2021
[DOI: 10.1116/6.0001161]

Sun, Bin
Grap, Thomas
Frahm, Thorben
Scholz, Stefan
Knoch, Joachim (Corresponding author)

[Journal Article]
On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors
In: IEEE transactions on electron devices : ED, 68 (7), 3684-3689, 2021
[DOI: 10.1109/TED.2021.3081527]

Sun, Bin (Corresponding author)
Richstein, Benjamin
Liebisch, Patrick
Frahm, Thorben
Scholz, Stefan
et al.

[Journal Article]
Turning Low-Nanoscale Intrinsic Silicon Highly Electron-Conductive by SiO2 Coating
In: ACS applied materials & interfaces, 13 (17), 20479-20488, 2021
[DOI: 10.1021/acsami.0c22360]

König, Dirk (Corresponding author)
Frentzen, Michael
Wilck, Noel
Berghoff, Birger Veit
Pis, Igor
et al.

[Journal Article]
Epitaxial GeSn/Ge Vertical Nanowires for p-Type Field-Effect Transistors with Enhanced Performance
In: ACS applied nano materials, 4 (1), 94-101, 2021
[DOI: 10.1021/acsanm.0c02368]

Liu, Mingshan
Yang, Dong
Shkurmanov, Alexander
Bae, Jin Hee
Schlykow, Viktoria
et al.

[Dissertation / PhD Thesis]
Ge(Sn)-based vertical gate-all-around nanowire MOSFETs and inverters for low power logic, 2021
[DOI: 10.18154/RWTH-2021-02244]

Liu, Mingshan

[Contribution to a book, Contribution to a conference proceedings]
Vertical Heterojunction Ge0.92 Sn0.08 /Ge GAA Nanowire pMOSFETs : Low SS of 67 mV/dec, Small DIBL of 24 mV/V and Highest Gm,ext of 870 μS/μm
In: 2020 IEEE Symposium on VLSI Technology : 16-19 June 2020, Honolulu, Hawaii, USA : proceedings / 2020 VLSI Technology Symposium; IEEE, 9265090, 2 Seiten, 2020
[DOI: 10.1109/VLSITechnology18217.2020.9265090]

Liu, Mingshan (Corresponding author)
Schlykow, Viktoria
Hartmann, Jean-Michel
Knoch, Joachim
Grützmacher, Detlev
et al.

[Book]
Nanoelectronics : device physics, fabrication, characterisation
In: De Gruyter Graduate, 2020
[DOI: 10.1515/9783110575507]

Knoch, Joachim

[Journal Article]
Dissolution of donor-vacancy clusters in heavily doped n-type germanium
In: New journal of physics, 22 (12), 123036, 2020
[DOI: 10.1088/1367-2630/abc466]

Prucnal, Slawomir (Corresponding author)
Liedke, Maciej O.
Wang, Xiaoshuang
Butterling, Maik
Posselt, Matthias
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[Journal Article]
Design guidelines for transition metals as interstitial emitters in silicon nanocrystals to tune photoluminescence properties: zinc as biocompatible example
In: Nanoscale, 12 (37), 19340-19349, 2020
[DOI: 10.1039/D0NR05156J]

König, Dirk (Corresponding author)
Tilley, Richard D.
Smith, Sean C.

[Journal Article]
Guest Editorial
In: IEEE journal of the Electron Devices Society, 8, 738-739, 2020
[DOI: 10.1109/JEDS.2020.3009974]

Knoch, Joachim
Lemme, Max C.
Beck, Romuald B.
Lukasiak, Lidia

[Journal Article]
Diameter Scaling of Vertical Ge Gate- All-Around Nanowire pMOSFETs
In: IEEE transactions on electron devices, 67 (7), 2988-2994, 2020
[DOI: 10.1109/TED.2020.2996183]

Liu, Mingshan (Corresponding author)
Lentz, Florian
Trellenkamp, Stefan
Hartmann, Jean-Michel
Knoch, Joachim
et al.

[Journal Article]
A case study on particulate emissions from a gasoline plug-in hybrid electric vehicle during engine warm-up, taking into account start-stop operation
In: Proceedings of the Institution of Mechanical Engineers / D, 234 (13), 2907-2922, 2020
[DOI: 10.1177/0954407020931227]

Lenz, Martin (Corresponding author)
Cremer, Moritz
Guse, Daniel
Röhrich, Henning
Pischinger, Stefan

[Contribution to a book, Journal Article]
Non-equilibrium dynamics, materials and structures for hot carrier solar cells: a detailed review
In: Semiconductor science and technology, 35 (7), 073002, 2020
[DOI: 10.1088/1361-6641/ab8171]

König, Dirk (Corresponding author)
Yao, Y.
Puthen-Veettil, Binesh
Smith, S. C.

[Journal Article]
Vertical Ge Gate-All-Around Nanowire pMOSFETs With a Diameter Down to 20 nm
In: IEEE electron device letters, 41 (4), 533-536, 2020
[DOI: 10.1109/LED.2020.2971034]

Liu, Mingshan
Scholz, Stefan
Hardtdegen, Alexander
Bae, Jin Hee
Hartmann, Jean-Michel
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[Journal Article]
Hybrid multi-chip assembly of optical communication engines by in situ 3D nano-lithography
In: Light : Science & Applications, 9 (1), 71, 2020
[DOI: 10.1038/s41377-020-0272-5]

Blaicher, Matthias
Billah, Muhammad Rodlin
Kemal, Juned
Hoose, Tobias
Marin-Palomo, Pablo
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[Contribution to a book, Journal Article]
Vertical heterojunction Ge0.92Sn0.08/Ge gate-all-around nanowire pMOSFETs with NiGeSn contact
In: Solid state electronics : SSE, 168, 107716, 2019
[DOI: 10.1016/j.sse.2019.107716]

Liu, Mingshan (Corresponding author)
Mertens, Konstantin
von den Driesch, Nils
Schlykow, Viktoria
Grap, Thomas
et al.

[Contribution to a book, Contribution to a conference proceedings]
Vertical Heterojunction Ge0.92Sn0.08/Ge Gate-All-Around Nanowire pMOSFETs
In: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) / publisher: IEEE, 4 Seiten, 2019
[DOI: 10.1109/EUROSOI-ULIS45800.2019.9041910]

Liu, Mingshan (Corresponding author)
Mertens, Konstantin
von den Driesch, Nils
Grap, Thomas
Trellenkamp, Stefan
et al.

[Contribution to a book, Contribution to a conference proceedings]
First Demonstration of Vertical Ge0.92Sn0.08/Ge and Ge GAA Nanowire nMOSFETs with Low SS of 66 mV/dec and Small DIBL of 35 mV/V
In: 2019 International Electron Devices Meeting : technical digest / publisher: IEEE, 29.6.1-29.6.4, 2019
[DOI: 10.1109/IEDM19573.2019.8993571]

Liu, Mingshan (Corresponding author)
Scholz, Stefan
Mertens, Konstantin
Bae, Jin Hee
Hartmann, Jean-Michel
et al.

[Journal Article]
Selective area growth and stencil lithography for in situ fabricated quantum devices
In: Nature nanotechnology, 14 (9), 825-831, 2019
[DOI: 10.1038/s41565-019-0506-y]

Schüffelgen, Peter (Corresponding author)
Rosenbach, Daniel
Li, Chuan
Schmitt, Tobias
Schleenvoigt, Michael
et al.

[Dissertation / PhD Thesis]
Monokristalline NEMS-Sensoren mit feldeffektbasierter Signaltransduktion : Entwurf und Herstellung sensitiver Bauelemente auf Basis monokristallinen Siliziums für nano- und opto-elektromechanische Sensoranwendungen, 2019
[DOI: 10.18154/RWTH-2020-01646]

Scholz, Stefan

[Journal Article]
Editorial
In: IEEE journal of the Electron Devices Society : J-EDS, 7 (1), 1161-1162, 2019
[DOI: 10.1109/JEDS.2019.2954646]

Lemme, Max C.
Knoch, Joachim

[Dissertation / PhD Thesis]
Entwicklung eines gekoppelten Photo-voltaik-Elektrolyse-Systems aus einer monolithischen Reihenschaltung siliziumbasierter, rückseitenkontaktierter Solarzellen und einer Platin / Rutheniumoxid-Elektrolysezelle für die direkte Spaltung von Wasser, 2019
[DOI: 10.18154/RWTH-2020-00063]

Nordmann, Sven Andreas

[Journal Article]
Electronic Structure Shift of Deeply Nanoscale Silicon by SiO 2 versus Si 3 N 4 Embedding as an Alternative to Impurity Doping
In: Physical review applied, 12 (5), 054050, 2019
[DOI: 10.1103/PhysRevApplied.12.054050]

König, Dirk
Wilck, Noel
Hiller, Daniel
Berghoff, Birger Veit
Meledin, Alexander
et al.

[Journal Article]
Analytical description of nanowires : I. Regular cross sections for zincblende and diamond structures
In: Acta crystallographica / B, 75 (5), 788-802, 2019
[DOI: 10.1107/S2052520619009351]

König, Dirk (Corresponding author)
Smith, Sean C.

[Contribution to a book, Journal Article]
Spin Qubits Confined to a Silicon Nano-Ridge
In: Applied Sciences, 9 (18), 3823, 2019
[DOI: 10.3390/app9183823]

Klos, Jan
Sun, Bin
Beyer, Jacob Clemens Lucas
Kindel, Sebastian David
Hellmich, Lena
et al.

[Journal Article]
Nanoscale n ++ -p junction formation in GeOI probed by tip-enhanced Raman spectroscopy and conductive atomic force microscopy
In: Journal of applied physics, 125 (24), 245703, 2019
[DOI: 10.1063/1.5080289]

Prucnal, Slawomir (Corresponding author)
Berencén, Yonder
Wang, Mao
Georgiev, Yordan M.
Erbe, Artur
et al.

[Journal Article]
Role of elemental intermixing at the In2S3/CIGSe heterojunction deposited using reactive RF magnetron sputtering
In: Solar energy materials & solar cells, 195, 367-375, 2019
[DOI: 10.1016/j.solmat.2019.03.026]

Soni, Purvesh (Corresponding author)
Raghuwanshi, Mohit
Wuerz, Roland
Berghoff, Birger Veit
Knoch, Joachim
et al.