Nanoelectronics Devices


The Metal-oxide-semiconductor field-effect transistor (MOSFET) is by far the most successful and widespread electronic device. Scaling down the dimensions of MOSFETs has led to integration densities with billions of transistors fitting onto a few square centimeters of chip area. However, scaling has always been accompanied by efforts to avoid parasitic effects such as leakage. Thus, in recent years the classical silicon MOSFET has been replaced more and more by transistors consisting of alternative materials as well as three-dimensional device architectures. In addition, novel device concepts for the realization of highly integrated circuits with ultra-low power consumption are currently being investigated. The present lecture deals with nanoelectronics devices, providing detailed insights into their device physics aspects, discussing the limitations as well as possible solution strategies.

  Schematic of nanelectronics device Copyright: IHT RWTH  

The course starts with revisiting the classical MOSFET explaining Moore’s law, the scaling of transistors and the appearance and impact of so-called short-channel-effects. Strategies to circumvent short-channel-effects such as nanowire transistors, carbon nanotube and graphene devices will be introduced and discussed in detail. Furthermore, novel device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel field-effect transistors will be studied. In addition to simple models that allow predicting the device performance based on ballistic electronic transport this lecture gives an introduction into device simulation techniques, in particular the non-equilibrium Green’s function formalism.

The course is not taught in the traditional way with two hours of lecture and one hour of exercise. Instead, the exercise is integrated into the lecture and students have to work out and elaborate on part of the lecture material in teams of 3 to 4 students. The final examination is a written test.

The course will be offered regularly during winter terms and lays the foundation for the course Quantum Simulation of Carbon Nanotube and Graphene Nanoribbon Field-Effect Transistors.

Lecture dates and more information at Campus Office.