Impact of Floating Body Effect, Back-Gate Traps, and Trap-Assisted Tunneling on Scaled In 0.53 Ga 0.47 As Ultrathin-Body MOSFETs and Mitigation Measures

New York, NY / IEEE (2018) [Journal Article]

IEEE transactions on electron devices : ED
Volume: 65
Issue: 6
Page(s): 2578-2584


Selected Authors

Sant, Saurabh
Aguirre, Paulina
Hahn, Herwig
Deshpande, Veeresh
Czornomaz, Lukas

Other Authors

Schenk, Andreas