First Demonstration of Vertical Ge 0.92 Sn 0.08 /Ge and Ge GAA Nanowire nMOSFETs with Low SS of 66 mV/dec and Small DIBL of 35 mV/V

New York, N.Y / Inst. of Electr. and Electronics Engineers (2019) [Journal Article]

... IEEE International Symposium on Circuits and Systems proceedings
Volume: 2019
Page(s): 1-4


Selected Authors

Liu, Mingshan
Scholz, Stefan
Mertens, Konstantin
Bae, Jin Hee
Hartmann, Jean-Michel

Other Authors

Knoch, Joachim
Buca, Dan
Zhao, Qing-Tai